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BSR31-TAPE-13

NXP Semiconductors

BSR31-TAPE-13 by NXP Semiconductors

BSR31-TAPE-13 by NXP Semiconductors is a PNP power BJT designed for switching applications. It features a max VCEsat of 0.5V, 1A collector current, and operates up to 150 °C. This compact surface mount transistor ensures efficient performance in electronic circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,311 parts In-Stock

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Vyrian

USA . 615 parts In-Stock

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Anansix

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One Stop Electronics

USA . 445 parts In-Stock

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$59.050

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UNI Independent Distributors

Spain . 6,692 parts In-Stock

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Northwest PG Solutions

USA . 1,998 parts In-Stock

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Corphita

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Native Components

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Overview

Unlock the potential of your designs with the BSR31-TAPE-13 from NXP Semiconductors, a leader in innovative solutions. This high-quality PNP power transistor excels in switching applications, ensuring reliable performance and efficiency. With its compact surface-mount design and robust thermal characteristics, it seamlessly integrates into diverse electronic systems. Trust in NXP's dedication to excellence and enhance your projects with superior reliability and value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent durability and resistance to environmental factors, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration is ideal for applications where a negative voltage needs to be switched, providing versatility in circuit design.

Configuration: SINGLE

The single configuration makes it easier to integrate into designs, allowing for simpler circuit layouts.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control larger currents, making it suitable for power management.

Surface Mount: YES

Being surface mount technology (SMT) friendly allows for high-density circuits and automated assembly processes, reducing manufacturing costs.

Maximum VCEsat: 0.5 V

A low VCEsat value means higher efficiency during operation, reducing power loss and improving thermal performance.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs, providing flexibility in layout design.

Terminal Form: FLAT

Flat terminals allow for better contact and ease of soldering, ensuring reliable connections.

No. of Terminals: 3

The three-terminal design is standard for BJTs, providing necessary connectivity while maintaining compactness.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes board space usage, catering to compact electronic designs.

Minimum DC Current Gain (hFE): 50

A minimum hFE of 50 ensures adequate amplification for most applications, making it a reliable choice for signal processing.

Maximum Operating Temperature: 150 °C

The high operating temperature allows this transistor to function in demanding environments without failure, enhancing longevity.

Maximum Collector-Base Capacitance: 20 pF

Low collector-base capacitance enables faster switching speeds, making it suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 60 V

A collector-emitter voltage rating of 60 V provides versatility for various power circuit designs.

Transistor Element Material: SILICON

Silicon offers excellent electrical properties, leading to high performance and reliability in a wide range of applications.

Maximum Turn On Time (ton): 500 ns

A fast turn-on time improves the responsiveness of circuits, making this transistor suitable for dynamic applications.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle significant loads, suitable for power applications.

Maximum Turn Off Time (toff): 650 ns

A reasonable turn-off time supports efficient switching in time-sensitive applications.

Terminal Position: SINGLE

Single terminal positioning allows for simplified PCB integration, optimizing layout options.

Case Connection: COLLECTOR

Designing the collector connection into the case enhances performance reliability and reduces parasitic elements.

Nominal Transition Frequency (fT): 100 MHz

A high transition frequency makes this transistor suitable for RF and high-speed applications, ensuring efficient signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BSR31-TAPE-13 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

20 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

650 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

.5 V

Trade Compliance

BSR31-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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