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BSR33,115

NXP Semiconductors

BSR33,115 by NXP Semiconductors

NXP Semiconductors' BSR33,115 is a PNP Power BJT with 80V VCE, 1A IC, and 100MHz fT. Ideal for switching applications, it comes in a small outline package with flat terminals for surface mounting. With a max power dissipation of 1W and operating temp up to 150°C, it offers reliable performance in various electronic designs.

Median Price

$0.279

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 17 parts In-Stock

1+ parts

$0.670

100+ parts

$0.264

1k+ parts

$0.174

10k+ parts

$0.128

17

$0.670

$0.264

$0.174

$0.128

Newark

USA . 1,437 parts In-Stock

1+ parts

$1.380

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$0.645

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$1.380

$0.645

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Rochester

USA . 139,804 parts In-Stock

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$0.290

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$0.240

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Verical

USA . 111,500 parts In-Stock

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$0.268

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Arrow

USA . 9,000 parts In-Stock

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$0.144

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$0.143

9,000

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$0.144

$0.143

Chip1Stop

Japan . 9,000 parts In-Stock

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$0.170

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$0.170

TTI

USA . 6,000 parts In-Stock

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$0.160

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$0.122

6,000

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$0.122

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

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$0.101

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$0.095

3,000

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$0.101

$0.095

Element14

Singapore . 1,528 parts In-Stock

1+ parts

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$0.754

1k+ parts

$0.671

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1,528

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$0.754

$0.671

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EBV Elektronik

Germany . 1,000 parts In-Stock

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RS (Exports)

UK . 700 parts In-Stock

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$0.376

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$0.233

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700

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$0.376

$0.233

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Distributors (In-Stock)

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Digiode

USA . 2,398 parts In-Stock

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$0.104

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2,398

$0.104

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TME

Poland . 1,096 parts In-Stock

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$0.920

100+ parts

$0.333

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1,096

$0.920

$0.333

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Chip Stock

USA . 72,000 parts In-Stock

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Vyrian

USA . 7,231 parts In-Stock

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.131

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$0.124

3,000

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$0.124

VNN

France . 2,755 parts In-Stock

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2,755

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NAC Semi

USA . 2,000 parts In-Stock

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$0.164

2,000

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$0.164

LIBRA Elektronik GmbH

Germany . 1,000 parts In-Stock

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1,000

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Anansix

USA . 618 parts In-Stock

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618

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ACDS - Activité Composants Distribution Service

France . 495 parts In-Stock

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495

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Distributors (Availability)

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Ampacity Inc.

Singapore . 28,469 parts In-Stock

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$0.091

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$0.091

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Corphita

USA . 1,819 parts In-Stock

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$0.098

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AZTECH Wire

Italy . 5,643 parts In-Stock

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$0.170

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Corohmni

South Africa . 237 parts In-Stock

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$0.815

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237

$0.815

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Modulus Dynamics

Lithuania . 16,659 parts In-Stock

1+ parts

$1.555

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$1.555

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$1.555

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16,659

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Continental Prestige Electronics

USA . 23,104 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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Epart123

USA . 5,492 parts In-Stock

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$0.069

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$0.063

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$0.063

UNI Independent Distributors

Spain . 5,247 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Supply Digital

USA . 2,878 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Perfect Parts

USA . 2,387 parts In-Stock

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Argo Parts USA

USA . 1,025 parts In-Stock

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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1,000

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Cyclops Electronics Ltd (Excess)

UK . 495 parts In-Stock

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495

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Discover the power of NXP Semiconductors' BSR33,115 PNP Power Bipolar Junction Transistor (BJT). This high-quality component is designed for switching applications, offering a maximum collector-emitter voltage of 80V and a maximum collector current of 1A. With a small outline package style and surface mount capabilities, the BSR33,115 is versatile and easy to integrate into various electronics projects. Trust NXP's reputation for excellence and innovation, and experience the value and benefits this transistor brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protect the internal components from external environmental factors, making the product long-lasting and reliable.

Polarity or Channel Type: PNP

The PNP configuration allows for easier integration with other PNP components in a circuit, making it versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier for engineers to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient and fast switching capabilities, suitable for a wide range of applications.

Surface Mount: YES

The surface mount capability allows for easy and convenient integration onto PCBs, saving space and streamlining the assembly process.

Maximum Power Dissipation: 1 W

With a maximum power dissipation of 1W, this transistor can handle moderate power loads efficiently, ensuring reliable performance.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating of 80V allows for the handling of higher voltage applications, increasing the versatility of the product.

Maximum Collector Current: 1 A

With a maximum collector current of 1A, this transistor can handle moderate to high current loads, making it suitable for a wide range of applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BSR33,115 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BSR33,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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