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BSR30-TAPE-13

NXP Semiconductors

BSR30-TAPE-13 by NXP Semiconductors

BSR30-TAPE-13 by NXP Semiconductors is a PNP power BJT designed for switching applications. It features a max VCEsat of 0.5V, 1A collector current, and operates up to 150 °C. This compact surface mount transistor ensures efficient performance in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,677 parts In-Stock

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Vyrian

USA . 3,438 parts In-Stock

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3,438

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Anansix

USA . 96 parts In-Stock

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96

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Native Components

USA . 702 parts In-Stock

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$0.100

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$0.096

702

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Northwest PG Solutions

USA . 1,546 parts In-Stock

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$0.110

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$0.097

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One Stop Electronics

USA . 1,590 parts In-Stock

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$24.050

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1,590

$24.050

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UNI Independent Distributors

Spain . 4,288 parts In-Stock

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Corphita

USA . 3,346 parts In-Stock

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Overview

Unlock the potential of your designs with the BSR30-TAPE-13 from NXP Semiconductors, a trusted leader in innovative solutions. This high-quality PNP power transistor excels in switching applications, offering superior reliability and efficiency for your projects. With its compact surface-mount design and impressive thermal performance, it’s perfect for modern electronics. Experience enhanced operational stability and enjoy the peace of mind that comes with NXP's stringent quality standards!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures reliability and protection against environmental factors, making this product suitable for diverse applications.

Polarity or Channel Type: PNP

Being a PNP type transistor allows for enhanced switching performance in various circuit configurations, especially in common-emitter setups.

Configuration: SINGLE

The single configuration features simplicity and ease of integration into various circuits, reducing design complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient on/off control, essential for modern electronic devices.

Surface Mount: YES

Surface mount capability ensures space-efficient designs and compatibility with automated assembly processes, boosting manufacturing efficiency.

Maximum VCEsat: 0.5 V

A low maximum VCEsat signifies minimal voltage drop during operation, enhancing overall efficiency and reducing energy losses in circuits.

Package Shape: RECTANGULAR

The rectangular package shape ensures optimal use of PCB space and allows for versatile placement in circuit designs.

Terminal Form: FLAT

Flat terminals provide better contact with PCB surfaces, promoting reliable electrical connections and simplified assembly.

No. of Terminals: 3

Three terminals facilitate easy connection to collector, base, and emitter points, streamlining circuit integration.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact circuit designs, making the transistor suitable for densely packed electronic devices.

Minimum DC Current Gain (hFE): 30

A minimum hFE of 30 ensures sufficient current amplification, making it effective for various low-power switching applications.

Maximum Operating Temperature: 150 °C

Its high maximum operating temperature ensures reliable performance in harsh conditions, suitable for industrial and automotive applications.

Maximum Collector-Base Capacitance: 20 pF

A low collector-base capacitance contributes to faster switching speeds, ideal for high-frequency applications.

Maximum Collector-Emitter Voltage: 60 V

A high collector-emitter voltage rating allows this transistor to operate safely in high-voltage environments, expanding its application range.

Transistor Element Material: SILICON

Silicon as the element material ensures stability and reliability, providing consistent performance across various operating conditions.

Maximum Turn On Time (ton): 500 ns

With a maximum turn on time of 500 ns, the transistor supports efficient switching, critical for fast response applications.

Maximum Collector Current (IC): 1 A

A maximum collector current of 1 A enables adequate power handling for a wide variety of applications, enhancing design flexibility.

Maximum Turn Off Time (toff): 650 ns

The fast turn off time of 650 ns contributes to improved efficiency in dynamic switching applications, essential for modern circuits.

Terminal Position: SINGLE

Single terminal positioning simplifies layout and design considerations, providing ease of integration in circuit designs.

Case Connection: COLLECTOR

The collector case connection ensures straightforward integration within circuits, minimizing potential for mistakes during assembly.

Nominal Transition Frequency (fT): 100 MHz

A nominal transition frequency of 100 MHz suits high-frequency applications, ensuring versatility in communication and signal processing circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BSR30-TAPE-13 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

20 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

650 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

.5 V

Trade Compliance

BSR30-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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