Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NXP Semiconductors' BSH111,215 is a N-CHANNEL FET with 55V DS Breakdown Voltage for SWITCHING applications. It features SINGLE configuration with built-in DIODE and operates in ENHANCEMENT MODE. With 0.335A Drain Current and 0.83W Power Dissipation, it's ideal for small outline packages in electronic devices.
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$0.051
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$0.057
Bristol Electronics
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J2 Sourcing AB
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VNN
LIBRA Elektronik GmbH
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Ampacity Inc.
$0.046
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$0.049
Argo Parts USA
$0.055
Netroflash
$0.054
$0.053
AZTECH Wire
$0.060
Microchip USA
$0.298
Aztec Data Supply Inc.
$0.710
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$1.580
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$0.065
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Plastic material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.
N-channel transistors are commonly used in switching applications, providing efficient control over electronic circuits.
Designed specifically for switching applications, this transistor offers fast and reliable performance when turning circuits on and off.
Surface mount technology allows for easy and compact integration of the transistor onto circuit boards, saving space and simplifying assembly.
With a minimum breakdown voltage of 55V, this transistor can handle higher voltage applications, providing robust performance and protection.
The high maximum drain current ensures that the transistor can handle sufficient load current, making it suitable for various applications.
The maximum power dissipation indicates the amount of heat the transistor can handle, ensuring stable operation under varying conditions.
With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.
Small Signal Field Effect Transistors (FET) BSH111,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
BSH111,215 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BAV99
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Allegro MicroSystems
RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
OPA2227UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
MBR0520L-T1
Won-top Electronics
MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.
1N4148WS
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
SMBJ18CA
Hy Electronic
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Telcom Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM358N
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Gec Plessey Semiconductors
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
SS14
Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
Daco Semiconductor
1554216002
Molex
WIRE AND CABLE;
1N4148
Terry Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;
U.FL-R-SMT-1(10)
Hirose Electric
U.FL-R-SMT-1(10) by Hirose Electric is a RF connector with 50 ohm impedance, 0.05 dB insertion loss, and 8 GHz operating frequency. Ideal for board mounting in commercial applications, it features gold termination finish, liquid crystal polymer insulator, and 200VAC dielectric voltage resistance.
MMBF170
Onsemi
The Onsemi MMBF170 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5A max drain current and 5 ohm on resistance, it offers efficient performance in small outline packages.
2N7002DW
Transys Electronics
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 5 pF;
FDV304P
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
BSS123NH6327
Infineon Technologies
BSS123NH6327 by Infineon Technologies is a N-CHANNEL FET with 100V DS breakdown voltage. It features 0.19A max drain current, 6 ohm max drain-source resistance, and operates in enhancement mode. Ideal for small outline applications requiring high power dissipation up to 0.5W at 150°C.
ZVN3320FTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
SI4909DY-T1-GE3
SI4909DY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 8A Drain Current, and 0.027ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
SI2365EDS-T1-GE3
SI2365EDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 5.9A Drain Current, and 0.041 ohm On Resistance. With ENHANCEMENT MODE operation and GULL WING terminals, it operates b/w -55 to 150 °C for various electronic designs.
FDN302P
FDN302P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.4A and 0.055 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
FDS4675_F085
Fairchild Semiconductor
FDS4675_F085 by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 11A Drain Current, and 0.013 ohm On Resistance. With ENHANCEMENT MODE operation, it has a max temp of 175°C and comes in an 8-terminal GULL WING package.
BSS138
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
SI2356DS-T1-GE3
SI2356DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 40V DS breakdown voltage and 4.3A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.051 ohm on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.
DMP2004K-7
Diodes Incorporated
DMP2004K-7 by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.6A Drain Current, and 0.9 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals, operating at up to 150°C.
MMBF170-7
Diodes Inc. MMBF170-7 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 0.5A max drain current, 5ohm RDS(on), and 5pF Crss. The small outline package with gull wing terminals makes it suitable for surface mount designs in enhancement mode operation up to 150°C.
BSS84PH6433XTMA1
BSS84PH6433XTMA1 by Infineon is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.17A Drain Current, 8 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor has METAL-OXIDE SEMICONDUCTOR tech and meets AEC-Q101 standards for automotive use.
FDC6506P
FDC6506P by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 30V, Max Drain Current of 1.8A, and Max Power Dissipation of 0.96W. With a max operating temperature of 150°C and -55°C min, it offers reliable performance in various environments.
FDN360P
FDN360P by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage and 0.08 ohm max RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With 2A max drain current, this MOSFET has a small outline package style suitable for surface mount designs.
LND150N3-GP005
Microchip Technology
LND150N3-GP005 by Microchip is a N-CHANNEL FET with 0.03A ID and 1000Ω RDS(on). Ideal for switching applications, it operates in depletion mode with built-in diode. Featuring 3 terminals, cylindrical package style, and 1pF Crss, it is designed for efficient performance in various electronic circuits.
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
2N7002K
Continental Device India
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
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BSH103,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .5 ohm; Peak Reflow Temperature (C): 260; No. of Terminals: 3;
NXP Semiconductors BSH103,215 is a N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with built-in DIODE and 0.9A Drain Current. Operating in ENHANCEMENT MODE, it has 0.75W Power Dissipation and operates up to 150°C.
BSH103
BSH103 by NXP Semiconductors is a small signal FET with N-channel configuration and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 30V, max drain current of 0.85A, and operating temperature up to 150°C. The transistor's package is surface mountable with Gull Wing terminals in a rectangular shape.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSH114,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
NXP Semiconductors BSH114,215 is a N-CHANNEL FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.85A Drain Current and 0.5 ohm On Resistance. Operating at 150°C, it features GULL WING terminals in a SMALL OUTLINE package.
BSH103,235
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .75 W; JESD-30 Code: R-PDSO-G3; Package Shape: RECTANGULAR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain-Source On Resistance: .5 ohm; Terminal Position: DUAL;
BSH105,215
BSH105,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 1.05A and max power dissipation of 0.417W.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
BSH103T/R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 30;
NXP Semiconductors' BSH103T/R is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.9A Drain Current, and 0.75W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor features a RECTANGULAR package with GULL WING terminals and operates up to 150°C.
BSH111BKR
BSH111BKR by Nexperia is a small signal N-CHANNEL FET with a min DS breakdown voltage of 55V. It is used for switching applications and features a max drain current of 0.21A and a max drain-source on resistance of 4 ohm.
BSH108,215
NXP Semiconductors BSH108,215 is a N-CHANNEL FET with 30V DS breakdown voltage and 1.9A max drain current. Ideal for switching applications, it features a built-in diode, 0.14 ohm on resistance, and operates in enhancement mode at up to 150°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; JEDEC-95 Code: TO-236AB; Maximum Drain Current (ID): 1.9 A;
BSH111
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 55 V; Peak Reflow Temperature (C): 260;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
BSH111BK
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 30;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; JEDEC-95 Code: TO-236AB; Peak Reflow Temperature (C): 260;
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