Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLC8G24LS-240AV by NXP Semiconductors is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, a power gain of 13.3 dB, and operates in the S band. This flatpack device ensures efficient performance in high-temperature environments up to 225 °C.
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The use of plastic/epoxy ensures lightweight construction and durability, making it suitable for various applications.
N-channel FETs typically have better performance, offering high electron mobility and efficiency in amplification.
This configuration is favorable for amplifying signals with good gain, making it ideal for RF applications.
Designed specifically for amplification, this FET is well-suited for enhancing signal strength in RF circuits.
Surface-mount technology allows for compact designs and easier integration onto circuit boards.
This high breakdown voltage provides robustness against voltage spikes, increasing reliability in high-power applications.
A minimum gain of 13.3 dB enables efficient signal amplification, making it a good choice for RF amplifiers.
The rectangular shape allows for efficient use of space on PCB layouts, optimizing design and electrical performance.
Flat terminals facilitate easy soldering and improve contact with the circuit board, ensuring a stable connection.
Enhancement mode operation is desirable for low-power applications, contributing to energy efficiency.
The capability to operate in the S band makes this FET suitable for telecommunications and radar applications.
With two elements, this FET can handle complex amplification tasks and improve signal integrity.
An 8-terminal configuration allows for more versatility in circuit design and easier integration into different systems.
The flatpack style ensures a low-profile design, suitable for space-constrained applications.
MOS technology offers high input impedance and low power consumption, ideal for sensitive RF applications.
A high maximum operating temperature indicates that this FET can withstand demanding environments without performance degradation.
Silicon is a widely used semiconductor material that provides reliable performance in a variety of electronic devices.
Low on-resistance minimizes power loss and heat generation, enhancing the efficiency of the transistor.
Dual terminal positioning aids in the layout flexibility on the circuit board, accommodating various designs.
Connection to the source terminal offers ease of integration into circuits, promoting design efficiency.
Compliance with IEC-60134 ensures that the product meets international standards for quality and reliability.
RF Power Field Effect Transistors (FET) BLC8G24LS-240AV attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors
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BLC8G24LS-240AV Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BAT54C-7-F
Diodes Incorporated
BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.
1N4148WSF-7
1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.
BAV99
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
LL4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM555CN
Rca Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
LM317T
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
LM358AN
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Formosa Microsemi
2N2222A
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
FDLL4148
Onsemi
FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.
1N4148
Hy Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
MMSZ5245BT1G
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
American Power Devices
DS18B20Z/T&R
Maxim Integrated
DS18B20Z/T&R by Maxim Integrated is a 12-bit digital temperature sensor with a max supply voltage of 5.5V and an accuracy of 0.50°C. It features a 1-Wire interface, operates b/w -55°C to 125°C, and is ideal for applications requiring precise temperature monitoring in compact spaces.
NE555D
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
DRV5053VAQLPG
Texas Instruments
Texas Instruments DRV5053VAQLPG is a magnetic field sensor with 2.5-38V supply voltage range, -40 to 125°C operating temperature, and 0-2V output. Ideal for applications requiring Hall effect sensors like automotive, industrial automation, and robotics due to its compact size (1.52" x 4mm) and high output current capability of 2.3A.
PTVA101K02EVV1
Wolfspeed
RF Power Field-Effect Transistors;
934065672112
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Transistor Element Material: SILICON; Highest Frequency Band: L BAND; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
VRF151G
Microchip Technology
VRF151G by Microchip Technology is a N-CHANNEL RF Power FET with 170V DS Breakdown Voltage, 40A Max Drain Current, and 500W Max Power Dissipation. Commonly used in amplifier applications for Very High Frequency Band operations due to its ceramic-metal sealed co-fired package and dual terminal position.
PD57070S-E
STMicroelectronics
PD57070S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 95 W.
MRF1513T1
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): CHIP CARRIER;
AFT09MS007NT1
AFT09MS007NT1 by NXP Semiconductors is an N-CHANNEL RF Power FET with a max power dissipation of 182W. It operates at up to 150°C, making it suitable for high-temperature applications. With surface mount capability and a single configuration, it's ideal for various RF power amplification needs.
934064687118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;
A2I25D025NR1
RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN;
MRFE6VP61K25HR6
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1300 W; Maximum Time At Peak Reflow Temperature (s): 40; No. of Terminals: 4;
934065231118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; No. of Elements: 1; Maximum Drain Current (ID): 36 A;
A3T23H300W23SR6
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLF888DU
Ampleon Netherlands B V
BLF888DU by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with 104V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. This CERAMIC, METAL-SEALED COFIRED transistor has a RECTANGULAR package style and is suitable for surface mount with FLAT terminals.
MRFE6VP100HR5
N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
CGH40006S-AMP1
PD85035C
PD85035C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 8 A and a breakdown voltage of 40 V. It operates in the ultra-high frequency band with a power dissipation of up to 108 W. Its ceramic, metal-sealed package ensures durability in demanding environments.
PD55008L-E
STMicroelectronics' PD55008L-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY, it offers 5A Drain Current and 19.5W Power Dissipation in a SQUARE PLASTIC package with NO LEAD terminals.
CGHV96050F1
Wolfspeed's CGHV96050F1 is an N-CHANNEL RF FET with 100V DS Breakdown Voltage, 10.75 dB Power Gain, and operates in DEPLETION MODE. Ideal for X BAND applications like AMPLIFIERS due to its GALLIUM NITRIDE technology, FLANGE MOUNT package style, and 6A Drain Current capability.
PTFA180701EV4R250XTMA1
Infineon Technologies
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BLF177,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 14 pF; No. of Terminals: 4; Operating Mode: ENHANCEMENT MODE;
MRF171A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Package Shape: ROUND; No. of Elements: 1;
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BLC8G20LS-310AV
BLC8G20LS-400AV
BLC8G21LS-160AV
BLC8G22LS-450AV
BLC8G24LS-240AVJ
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-PDFP-F8; Terminal Form: FLAT; Maximum Drain-Source On Resistance: .112 ohm;
BLC8G27LS-140AV
BLC8G27LS-210PV
BLC8G27LS-245AV
BLC8G27LS-60AV
BLC8G27LS-60AVH
BLC8G24LS-240AV
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Reference Standard: IEC-60134; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .112 ohm;
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