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BCP69-16,115

NXP Semiconductors

BCP69-16,115 by NXP Semiconductors

BCP69-16,115 by NXP is a PNP BJT transistor for switching applications. It has VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it's ideal for small outline packages in high-speed switching circuits.

Median Price

$0.269

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30

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1k+

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Chip1Stop

Japan . 40 parts In-Stock

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Newark

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Adafruit Industries

USA . 2,500 parts In-Stock

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$1.859

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$1.675

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Rochester

USA . 515,019 parts In-Stock

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Verical

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TTI

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Farnell

UK . 238 parts In-Stock

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Element14

Singapore . 238 parts In-Stock

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Arrow

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Digiode

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Nova Conductors

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IBS Electronics

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Component Sense

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PC Components Company LLC

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Inventory MP

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Prism Electronics

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Semicontronic

India . 110,830 parts In-Stock

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Ampacity Inc.

Singapore . 99,258 parts In-Stock

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Component Stockers USA

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Argo Parts USA

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Netroflash

USA . 2,000 parts In-Stock

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AZTECH Wire

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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Continental Prestige Electronics

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Overview

Upgrade your electronics with the BCP69-16,115 by NXP Semiconductors, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance in switching applications. With a maximum VCEsat of 0.5V and a minimum DC current gain of 100, this PNP transistor delivers reliable and efficient operation. Its compact design, Gull Wing terminals, and peak reflow temperature of 260°C make it ideal for surface mount applications. Trust NXP Semiconductors for cutting-edge technology and superior components that elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for circuits requiring PNP transistors, offering versatility in applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring reliable performance when turning circuits on and off.

Surface Mount: YES

Enables easy installation on circuit boards, saving space and reducing assembly time.

Maximum VCEsat: 0.5 V

Low saturation voltage helps reduce power loss and improves efficiency in switching applications.

Package Shape: RECTANGULAR

Efficient use of space on the circuit board, allowing for compact and streamlined designs.

No. of Terminals: 4

Provides multiple connection points for flexible circuit integration.

Maximum Power Dissipation (Abs): 1.4 W

High power dissipation capability allows for handling of moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Compact design ideal for space-constrained applications, improving overall circuit efficiency.

Minimum DC Current Gain (hFE): 100

Consistent gain ensures stable and predictable performance in various circuit conditions.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables reliable operation in various environmental conditions.

Maximum Collector-Emitter Voltage: 20 V

Adequate voltage rating for most common circuits, ensuring protection against voltage spikes.

Transistor Element Material: SILICON

High-quality material known for its reliability and performance in semiconductor devices.

Maximum Collector Current (IC): 1 A

Sufficient current rating for a wide range of applications, enabling versatility in circuit designs.

Terminal Finish: TIN

Provides good conductivity and solderability for secure connections in the circuit.

Terminal Position: DUAL

Dual terminal position allows for multiple connection options, enhancing flexibility in circuit layout.

Case Connection: COLLECTOR

Specific case connection simplifies circuit design and ensures proper connectivity.

Maximum Time At Peak Reflow Temperature (s): 30

Supports efficient soldering process with the specified time limit for peak reflow temperature.

Peak Reflow Temperature °C: 260

High peak reflow temperature for reliable soldering and ensuring long-lasting connections.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency allows for fast switching speeds in high-frequency applications, ensuring quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCP69-16,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP69-16,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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