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BCP69-16

NXP Semiconductors

BCP69-16 by NXP Semiconductors

BCP69-16 by NXP is a PNP BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 100, and IC of 1A, it operates at up to 150°C. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs in various electronic devices.

Median Price

$0.068

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,500 parts In-Stock

1+ parts

-

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$0.068

1k+ parts

$0.056

10k+ parts

$0.050

1,500

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$0.068

$0.056

$0.050

Distributors (In-Stock)

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Digiode

USA . 3,381 parts In-Stock

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$0.053

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$0.053

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Bristol Electronics

USA . 7,080 parts In-Stock

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$0.750

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$0.375

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$0.150

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$0.113

7,080

$0.750

$0.375

$0.150

$0.113

Nova Conductors

Japan . 750 parts In-Stock

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$1.000

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$1.000

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Cyclops Electronics Ltd

UK . 52,093 parts In-Stock

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ComSIT Distribution GmbH

Germany . 8,000 parts In-Stock

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ComSIT USA

USA . 8,000 parts In-Stock

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Dan-Mar Components

USA . 7,170 parts In-Stock

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Vyrian

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VNN

France . 4,249 parts In-Stock

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Semi Source

USA . 4,142 parts In-Stock

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North Shore Components

USA . 3,195 parts In-Stock

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Speed Components Ltd

Israel . 3,000 parts In-Stock

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LWI Electronics Inc

India . 2,087 parts In-Stock

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Anansix

USA . 1,754 parts In-Stock

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NPI Materials, Inc.

USA . 1,750 parts In-Stock

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Goldney Electronics S.L.

Spain . 1,164 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,147 parts In-Stock

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PC Components Company LLC

USA . 1,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 936 parts In-Stock

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First Choice Components Inc.

USA . 160 parts In-Stock

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J2 Sourcing AB

Sweden . 127 parts In-Stock

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Prism Electronics

USA . 42 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,312 parts In-Stock

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$0.048

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$0.048

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Corphita

USA . 5,659 parts In-Stock

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$0.050

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$0.050

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AZTECH Wire

Italy . 6,285 parts In-Stock

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$0.260

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$0.260

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Modulus Dynamics

Lithuania . 22,820 parts In-Stock

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$0.738

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$0.708

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$0.679

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$0.738

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Perfect Parts

USA . 548,370 parts In-Stock

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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S.R.D Solutions

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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UNI Independent Distributors

Spain . 4,281 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Microchip USA

USA . 3,692 parts In-Stock

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Assy Fe

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Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,147 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.980

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$0.950

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$0.930

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$0.930

Authorized Procurement Solutions

USA . 545 parts In-Stock

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GreenTree Electronics

Israel . 545 parts In-Stock

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Futuretech Components

Singapore . 500 parts In-Stock

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Supply Digital

USA . 112 parts In-Stock

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Overview

Unleash the power of innovation with the BCP69-16 by NXP Semiconductors, a top-tier manufacturer known for delivering premium quality components. This small signal bipolar junction transistor (BJT) is designed for switching applications, offering customers unparalleled reliability and performance. With a maximum VCEsat of just 0.5V and a minimum DC current gain of 100, the BCP69-16 provides exceptional efficiency and power dissipation. Whether you're working on consumer electronics or industrial automation, this PNP transistor in a compact rectangular package will elevate your designs to new heights. Choose NXP Semiconductors for cutting-edge technology that delivers unmatched value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and allows for smaller size and lighter weight.

Polarity or Channel Type: PNP

PNP type transistor allows for versatile switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed specifically for switching applications for reliable performance.

Surface Mount: YES

Surface mount capability for easy and compact PCB assembly.

Maximum VCEsat: 0.5 V

Low VCEsat value ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and soldering on PCBs.

Terminal Form: GULL WING

Gull wing terminals provide secure mounting and connection.

Maximum Power Dissipation (Abs): 1.35 W

High power dissipation capability for reliable performance under load.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space and allows for compact designs.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures consistent and stable amplification.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatile use in different environments.

Maximum Collector-Emitter Voltage: 20 V

High collector-emitter voltage rating for increased reliability and safety margin.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 1 A

High collector current rating for handling moderate to high current loads.

Terminal Finish: Tin (Sn)

Tin terminal finish for good solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal position for flexible mounting and connection options.

Case Connection: COLLECTOR

Case connection at collector for easy circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 30

Quick reflow time for efficient manufacturing and assembly processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance for reliable soldering and thermal stability.

Reference Standard: IEC-60134

Compliance with international standards ensures quality and reliability.

Nominal Transition Frequency (fT): 40 MHz

High nominal transition frequency for fast switching and signal processing capabilities.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCP69-16 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

IEC-60134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP69-16 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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