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BCP69-16T/R

NXP Semiconductors

BCP69-16T/R by NXP Semiconductors

The NXP BCP69-16T/R is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 100, and fT of 40MHz. With a max IC of 1A and package style in small outline, it operates at up to 150°C making it suitable for various electronic circuits.

Median Price

$0.875

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 280 parts In-Stock

1+ parts

$0.750

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$0.375

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$0.263

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280

$0.750

$0.375

$0.263

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Component Electronics Inc.

Canada . 940 parts In-Stock

1+ parts

$1.000

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$0.750

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$0.650

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940

$1.000

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Digiode

USA . 1,004 parts In-Stock

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1,004

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Connector Distribution Corp

USA . 950 parts In-Stock

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950

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Right Parts Inc.

USA . 950 parts In-Stock

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950

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Prism Electronics

USA . 918 parts In-Stock

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918

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VNN

France . 834 parts In-Stock

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Quantum Digital Technology

USA . 600 parts In-Stock

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600

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Inventory MP

USA . 544 parts In-Stock

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544

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Vyrian

USA . 526 parts In-Stock

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526

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Anansix

USA . 423 parts In-Stock

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423

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Nova Conductors

Japan . 15 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 526 parts In-Stock

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$19.860

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526

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One Stop Electronics

USA . 670 parts In-Stock

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$38.050

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670

$38.050

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Ampacity Inc.

Singapore . 905 parts In-Stock

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$39.050

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$39.050

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UNI Independent Distributors

Spain . 6,222 parts In-Stock

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Corphita

USA . 3,124 parts In-Stock

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Perfect Parts

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality BCP69-16T/R by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors delivers reliable and efficient components for various applications. The BCP69-16T/R belongs to the category of Small Signal Bipolar Junction Transistors, offering excellent performance in switching applications. With its low VCEsat and high DC current gain, this PNP transistor provides value and benefits to customers seeking optimal power dissipation and temperature management. Upgrade your projects with the BCP69-16T/R and experience the advantages of NXP Semiconductors' innovative technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP type is useful for many switching applications and complements other components in circuits.

Configuration: SINGLE

Simplifies circuit design and makes it easy to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring reliable performance in such applications.

Surface Mount: YES

Ease of PCB assembly and space-saving benefits in compact electronics designs.

Maximum VCEsat: 0.5 V

Low VCEsat helps in reducing power losses and improving efficiency in switching circuits.

Package Shape: RECTANGULAR

Standard shape for easy handling and fitting into circuit layouts.

Terminal Form: GULL WING

Enhances solder joint strength and reliability in surface mount applications.

Maximum Power Dissipation (Abs): 1.4 W

Capability to handle high power levels, ensuring long-term reliability in operation.

Package Style (Meter): SMALL OUTLINE

Compact package size for space-constrained applications and efficient PCB layout.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures consistent amplification and switching performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 20 V

Sufficient voltage rating for many low-power applications, ensuring device safety.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics and reliability in semiconductor devices.

Maximum Collector Current (IC): 1 A

Able to handle moderate current levels, suitable for low-power applications.

Terminal Position: DUAL

Dual terminal design for easy connectivity and versatile usage in circuits.

Case Connection: COLLECTOR

Clear connection designation for proper circuit configuration and integration.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency for fast switching speeds and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCP69-16T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP69-16T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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