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2PB709AR-TAPE-13

NXP Semiconductors

2PB709AR-TAPE-13 by NXP Semiconductors

2PB709AR-TAPE-13 by NXP Semiconductors is a PNP small signal BJT designed for switching applications. It features a max VCEsat of 0.5V, hFE of 210, and operates up to 150 °C. This surface-mount transistor is ideal for compact electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,620 parts In-Stock

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2,620

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Digiode

USA . 1,920 parts In-Stock

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1,920

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Vyrian

USA . 118 parts In-Stock

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118

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Distributors (Availability)

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Native Components

USA . 675 parts In-Stock

1+ parts

$6.070

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675

$6.070

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One Stop Electronics

USA . 1,274 parts In-Stock

1+ parts

$59.050

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1,274

$59.050

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UNI Independent Distributors

Spain . 2,456 parts In-Stock

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2,456

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Corphita

USA . 1,737 parts In-Stock

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1,737

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Northwest PG Solutions

USA . 434 parts In-Stock

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$5.949

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434

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$5.949

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Overview

Elevate your designs with the 2PB709AR-TAPE-13 from NXP Semiconductors, where quality meets reliability. This high-performance PNP transistor excels in switching applications, ensuring efficient operation even at elevated temperatures. With a compact footprint and robust construction, it seamlessly integrates into modern electronics, delivering enhanced performance and durability. Trust NXP's legacy of innovation to power your projects with confidence and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection from environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

As a PNP transistor, it allows for efficient control of current flow, suitable for various switching applications.

Configuration: SINGLE

Single configuration simplifies integration into circuit designs, reducing complexity and space requirements.

Transistor Application: SWITCHING

Designed for switching applications, it provides reliable performance in controlling loads and interfacing with digital logic.

Surface Mount: YES

Surface mount capability enables compact and efficient circuit board designs, facilitating automated assembly processes.

Maximum VCEsat: 0.5 V

With a low VCEsat, the transistor operates efficiently with minimal power loss, improving overall circuit performance.

Package Shape: RECTANGULAR

Rectangular shape optimizes space utilization on PCB, allowing for a more organized layout.

Terminal Form: GULL WING

Gull wing terminals enhance solderability and mechanical strength, ensuring reliability in connections.

No. of Terminals: 3

Having three terminals simplifies connections and integration into circuits, offering flexibility in design.

Package Style (Meter): SMALL OUTLINE

Small outline package design minimizes footprint on PCB, ideal for space-constrained applications.

Minimum DC Current Gain (hFE): 210

A high minimum hFE indicates strong amplification capabilities, making it ideal for signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can function reliably in demanding environments.

Maximum Collector-Base Capacitance: 5 pF

Low capacitance ensures faster switching times, improving the performance of high-frequency applications.

Maximum Collector-Emitter Voltage: 45 V

A high collector-emitter voltage rating gives it versatility across various circuit designs without risk of breakdown.

Transistor Element Material: SILICON

Silicon material provides stable performance and is the standard for most electronic applications due to its excellent electrical characteristics.

Maximum Collector Current (IC): 0.1 A

Handling up to 0.1 A of collector current makes it suitable for a variety of low to medium power applications.

Terminal Position: DUAL

Dual terminal position allows for easier placement and better routing on circuit boards, enhancing overall design flexibility.

Nominal Transition Frequency (fT): 70 MHz

A nominal transition frequency of 70 MHz indicates suitability for high-speed switching applications, making it adept in RF and digital circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PB709AR-TAPE-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

210

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

2PB709AR-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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