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2PB709AQ-TAPE-7

NXP Semiconductors

2PB709AQ-TAPE-7 by NXP Semiconductors

2PB709AQ-TAPE-7 by NXP is a PNP small signal BJT designed for switching applications. It features a max VCEsat of 0.5V, hFE of 160, and operates up to 150 °C. This surface-mount transistor is ideal for compact electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,031 parts In-Stock

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3,031

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Vyrian

USA . 1,548 parts In-Stock

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1,548

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Anansix

USA . 1,465 parts In-Stock

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1,465

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Native Components

USA . 875 parts In-Stock

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$1.100

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875

$1.100

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Northwest PG Solutions

USA . 1,366 parts In-Stock

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$1.210

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$1.210

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One Stop Electronics

USA . 809 parts In-Stock

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$25.050

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809

$25.050

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UNI Independent Distributors

Spain . 7,630 parts In-Stock

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7,630

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Corphita

USA . 957 parts In-Stock

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Overview

Elevate your designs with the 2PB709AQ-TAPE-7 from NXP Semiconductors, a benchmark in Small Signal Bipolar Junction Transistors. Crafted for excellence, this PNP transistor delivers reliable switching performance and operates seamlessly in diverse applications. With NXP’s legacy of innovation and quality, you gain access to superior efficiency, compact design, and optimal thermal management—empowering your projects to achieve peak performance while ensuring long-lasting reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: PNP

Being a PNP type transistor, it is advantageous for high-side switching applications, allowing for efficient control in positive voltage environments.

Configuration: SINGLE

A single configuration simplifies circuit design, making it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor offers quick response times, enabling efficient power management and signal processing.

Surface Mount: YES

Surface mount capability allows for compact circuit layouts and automated assembly processes, enhancing production efficiency.

Maximum VCEsat: 0.5 V

A low VCEsat indicates minimal voltage drop across the transistor, resulting in higher efficiency and reduced power loss during operation.

Package Shape: RECTANGULAR

The rectangular package shape is ideal for space-saving designs, allowing for efficient use of PCB real estate.

Terminal Form: GULL WING

Gull-wing terminals facilitate easier soldering and provide reliable mechanical support for the device, ensuring strong connections on the PCB.

No. of Terminals: 3

With three terminals, the transistor can easily integrate into basic circuits, providing essential functions without unnecessary complexity.

Package Style (Meter): SMALL OUTLINE

The small outline package style is suited for modern electronics, enabling high-density packaging for advanced applications.

Minimum DC Current Gain (hFE): 160

A minimum hFE of 160 provides good amplification characteristics, making this transistor effective for various signal processing tasks.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures ensures reliability and longevity in demanding environments, broadening its application range.

Maximum Collector-Base Capacitance: 5 pF

A low collector-base capacitance supports fast switching speeds, making it suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 45 V

With a collector-emitter voltage rating of 45 V, the transistor can handle a wide range of voltages, making it versatile for various circuits.

Transistor Element Material: SILICON

Silicon as the element material allows for reliable performance and good thermal stability, essential for robust electronic applications.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1 A makes it suitable for low to moderate power applications, ensuring efficient operation in smaller circuits.

Terminal Position: DUAL

Dual terminal positioning enhances accessibility for connections on the PCB, simplifying integration into existing designs.

Nominal Transition Frequency (fT): 60 MHz

With a transition frequency of 60 MHz, this transistor is capable of handling high-frequency signals, making it ideal for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PB709AQ-TAPE-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

2PB709AQ-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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