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2PB709AQ-TAPE-13

NXP Semiconductors

2PB709AQ-TAPE-13 by NXP Semiconductors

2PB709AQ-TAPE-13 by NXP Semiconductors is a PNP small signal BJT designed for switching applications. It features a max VCEsat of 0.5V, hFE of 160, and operates up to 150 °C. This surface-mount transistor is ideal for compact electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,679 parts In-Stock

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3,679

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Anansix

USA . 2,216 parts In-Stock

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2,216

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Vyrian

USA . 1,367 parts In-Stock

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1,367

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One Stop Electronics

USA . 165 parts In-Stock

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$16.050

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165

$16.050

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Native Components

USA . 297 parts In-Stock

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$101.745

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$97.675

297

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$97.675

Northwest PG Solutions

USA . 1,842 parts In-Stock

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$111.920

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1,842

$111.920

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UNI Independent Distributors

Spain . 7,671 parts In-Stock

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7,671

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Corphita

USA . 559 parts In-Stock

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559

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Overview

Elevate your project with the 2PB709AQ-TAPE-13 from NXP Semiconductors—a small signal PNP transistor designed for seamless switching applications. Renowned for exceptional quality and reliability, NXP empowers engineers with innovative solutions that ensure top-notch performance even in demanding environments. Experience enhanced efficiency, reduced energy consumption, and effortless integration, making it the perfect choice for modern electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making this transistor suitable for various applications.

Polarity or Channel Type: PNP

As a PNP transistor, it is ideal for use in high-side switching applications, providing flexibility for circuit designs.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it easier to implement in various electronic projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor is capable of efficiently controlling current flow in digital and analog circuits.

Surface Mount: YES

Surface mount technology allows for compact PCB designs and automated manufacturing processes, enhancing scalability and production efficiency.

Maximum VCEsat: 0.5 V

A low VCEsat results in reduced power loss during operation, improving overall system efficiency, particularly in power-sensitive applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy integration and placement on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals enhance solder joint reliability and allow for effective heat dissipation, important for stable operation in electronic circuits.

No. of Terminals: 3

With three terminals, this transistor is easy to use in standard configurations, making it versatile for different electronic designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a compact footprint, making it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 160

A high DC current gain indicates efficient amplification characteristics, making this transistor effective in various amplification applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance in demanding environments, ideal for automotive and industrial applications.

Maximum Collector-Base Capacitance: 5 pF

Low collector-base capacitance minimizes signal distortion and improves the transistor's performance at high frequencies.

Maximum Collector-Emitter Voltage: 45 V

A maximum collector-emitter voltage of 45 V allows for use in a wide range of voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical properties and is widely used in reliable and efficient transistor designs.

Maximum Collector Current (IC): 0.1 A

A maximum collector current rating of 0.1 A allows for efficient switching in low-power circuit applications.

Terminal Position: DUAL

Dual terminal position enhances compatibility with standard circuit designs, making it easier to implement in various configurations.

Nominal Transition Frequency (fT): 60 MHz

A nominal transition frequency of 60 MHz makes this transistor suitable for high-speed switching applications, enhancing performance in communication devices.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PB709AQ-TAPE-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

2PB709AQ-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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