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3SK224-UID-A

Nec Compound Semiconductor Devices

3SK224-UID-A by Nec Compound Semiconductor Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Feedback Capacitance (Crss): .025 pF; JESD-609 Code: e6;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 984 parts In-Stock

1+ parts

$9.461

100+ parts

-

1k+ parts

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10k+ parts

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984

$9.461

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-

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Northwest PG Solutions

USA . 328 parts In-Stock

1+ parts

$10.407

100+ parts

$9.366

1k+ parts

-

10k+ parts

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328

$10.407

$9.366

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-

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 3SK224-UID-A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Nec Compound Semiconductor Devices

Specs

Additional Features:

LOW NOISE

Configuration:

Maximum Drain Current (ID):

.025 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.025 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Minimum Power Gain (Gp):

15 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

3SK224-UID-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nec Compound Semiconductor Devices

Tokyo, March 14, 2002 - NEC Compound Semiconductor Devices, Ltd. (NEC Compound Semiconductor Devices) and Sumitomo Electric Industries, Ltd. (SEI) today announced they have joined into a multi-source agreement (MSA) to set a common architecture for 10 Gigabit per second (Gbps) detector modules used in optical networking. Sample shipments will start from today of products based on this common standard. The new device is developed to work within the 1.3 micron ~ 1.55 micron wavelength range and is mounted with a amplifier on the industry's smallest class of metal ceramic packages (L x W x H = 9.8mm x 7.5mm x 4.0mm). This super-small module addresses the calls coming from the industry for downsizing of 10 Gbps optical network transceivers. The detector module facilitates conversion of optical signals to electric signals and is one of the essential devices for 10 Gbps digital transmissions over optical fiber networks. NEC Compound Semiconductor Devices, Ltd. (NEC Compound Semiconductor Devices) is a leading provider of opticaland microwave devices, committed to meeting the specialized needs of its customers in the broadband and mobile networking fields with its compound and silicon semiconductor technologies. NEC Compound Semiconductor Devices, was divided from NEC Corporation and established in October 2001.

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