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NT5CC128M8GN-DII

Nanya Technology

NT5CC128M8GN-DII by Nanya Technology

NT5CC128M8GN-DII by Nanya Technology is a DDR3L DRAM with 128MX8 organization, operating at 800 MHz. It features a package style of GRID ARRAY, very thin profile, and fine pitch. Ideal for industrial applications requiring high memory density and fast access times.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,487 parts In-Stock

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1,487

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 461 parts In-Stock

1+ parts

$10.353

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461

$10.353

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Bastille Electronics

Australia . 96 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the NT5CC128M8GN-DII by Nanya Technology. As a leading manufacturer in the industry, Nanya Technology delivers top-of-the-line DRAM solutions that exceed expectations. Ideal for a wide range of applications, this DDR3L DRAM offers seamless multitasking, faster data processing, and ultimate efficiency. Experience the superior quality and cutting-edge technology of Nanya's products, providing exceptional value and unmatched benefits to customers worldwide. Elevate your system's performance with the NT5CC128M8GN-DII today.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material is durable and cost-effective, making the product reliable for long-term use.

Surface Mount:

YES - This feature allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Package Shape:

RECTANGULAR - The rectangular shape is space-efficient, allowing for more compact and organized PCB layouts.

Operating Mode:

SYNCHRONOUS - Synchronous operation ensures precise timing and coordination, enhancing overall system performance.

Self Refresh:

YES - The self-refresh capability helps maintain data integrity and stability, especially in power-saving modes.

Nominal Supply Voltage / Vsup (V):

1.35 - The low voltage requirement reduces power consumption and heat generation, ideal for energy-efficient systems.

Power Supplies (V):

1.35 - Consistent power supply at 1.35V ensures reliable and stable operation under varying load conditions.

No. of Terminals:

78 - The high number of terminals enables efficient data transfer and connectivity within the system.

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH - This advanced package style offers high density and reliability, suitable for high-performance applications.

Maximum Operating Temperature:

85 °C - With a high operating temperature range of 85°C, the product can withstand harsh environmental conditions.

Organization:

128MX8 - The 128MX8 organization optimizes memory efficiency and access speed for enhanced system performance.

Output Characteristics:

3-STATE - The 3-STATE output provides flexibility in driving multiple loads, improving system versatility.

Minimum Operating Temperature:

40 °C - The product's low minimum operating temperature of -40°C ensures reliable performance even in extreme cold environments.

Terminal Position:

BOTTOM - The bottom terminal position simplifies installation and connection processes, enhancing ease of use.

Maximum Seated Height:

1 mm - The slim profile with a maximum seated height of 1mm saves space and allows for compact system designs.

Maximum Clock Frequency (fCLK):

800 MHz - The high clock frequency supports fast data processing and efficient operation in high-performance applications.

Width:

8 mm - The narrow width of 8mm enables compact PCB designs and efficient use of space.

Minimum Supply Voltage (Vsup):

1.283 V - The low minimum supply voltage requirement ensures compatibility with various power sources and enhances system flexibility.

Length:

10.5 mm - The moderate length of 10.5mm offers a balanced form factor for ease of integration in different system configurations.

Temperature Grade:

INDUSTRIAL - The industrial temperature grade ensures reliable operation in demanding environments with extended temperature ranges.

Access Mode:

MULTI BANK PAGE BURST - The multi-bank page burst access mode enhances memory access efficiency and speed for optimized system performance.

Technology:

CMOS - The CMOS technology provides low power consumption and high-speed operation, making the product energy-efficient and reliable.

Terminal Form:

BALL - The ball terminal form offers strong mechanical connections and easy installation, ensuring secure and reliable performance.

Maximum Supply Current:

149 mA - With a maximum supply current of 149 mA, the product offers stable and efficient operation under varying load conditions.

No. of Words:

134217728 words - The high word capacity ensures ample storage space and efficient data handling for complex applications.

Sequential Burst Length:

8 - The sequential burst length of 8 enhances data transfer efficiency and streamlines memory access for improved system performance.

Memory Width:

8 - The memory width of 8 bits facilitates high-speed data processing and efficient communication within the system.

Terminal Pitch:

0.8 mm - The narrow terminal pitch of 0.8mm allows for high-density connections and precise signal transmission, ideal for modern circuit designs.

No. of Words Code:

128M - The 128M words code provides a large memory capacity for storing and processing extensive data sets in high-performance applications.

Maximum Supply Voltage (Vsup):

1.45 V - The maximum supply voltage tolerance of 1.45V ensures compatibility with different power sources and protects the product from overvoltage conditions.

Memory Density:

1073741824 bit - The high memory density of 1073741824 bits allows for efficient data storage and processing in memory-intensive applications.

Memory IC Type:

DDR3L DRAM - The DDR3L DRAM type offers high-speed data transfer rates and low power consumption, making it suitable for performance-critical applications.

Refresh Cycles:

8192 - The refresh cycle of 8192 ensures data integrity and stability, enhancing system reliability and performance.

Interleaved Burst Length:

8 - The interleaved burst length of 8 optimizes data transfer efficiency and memory access speed for enhanced system performance.

Maximum Access Time:

0.225 ns - The low maximum access time of 0.225ns ensures fast data retrieval and processing, improving overall system responsiveness.

Technical Specifications

DRAM NT5CC128M8GN-DII attributes and parameters. Explore more DRAM devices from Nanya Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Access Time:

.225 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

800 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-PBGA-B78

Length:

10.5 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

78

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA78,9X13,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.35

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1 mm

Self Refresh:

YES

Sequential Burst Length:

8

Sub-Category:

DRAMs

Maximum Supply Current:

149 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

NT5CC128M8GN-DII Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

Manufacturer Highlights

Nanya Technology

Nanya Technology holds innovation as our core value which is realized in the company’s dedication to research and develop, design, manufacture, marketing, and sales of Dynamic Random Access Memory (DRAM). Nanya’s commitment to research and development has enabled the company to accumulate extensive DRAM expertise and intellectual property. As a true leader in corporate citizenship, Nanya has proactively implemented green manufacturing technology. Nanya has harnessed the power of artificial intelligence (AI) to significantly upgrade production capacity and efficiency. The result is a company that provides industry leading DRAM solutions in a way that is environmentally friendly to our planet

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