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CM200DU-12F

Mitsubishi Electric

CM200DU-12F by Mitsubishi Electric

Mitsubishi Electric's CM200DU-12F is a N-CHANNEL IGBT with 2 elements, built-in diode, and RTC. It has a max VCEsat of 2.2V and can handle up to 200A collector current. Ideal for power control applications due to its high power dissipation of 590W and operating temperature of 150°C.

Median Price

$92.065

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Nova Conductors

Japan . 24 parts In-Stock

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$73.880

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24

$73.880

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Forefront Electronics and Design

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$110.250

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ACDS - Activité Composants Distribution Service

France . 700 parts In-Stock

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700

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Vyrian

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211

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Aztec Data Supply Inc.

USA . 3,110 parts In-Stock

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$1.780

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AZTECH Wire

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$17.642

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Continental Prestige Electronics

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$73.880

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$72.402

689

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$72.402

Netroflash

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$73.880

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$70.186

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$68.708

500

$73.880

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$70.186

$68.708

Corohmni

South Africa . 177 parts In-Stock

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$73.880

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Microchip USA

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$169.924

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Argo Parts USA

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Perfect Parts

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Overview

Power up your projects with the Mitsubishi Electric CM200DU-12F, a high-quality Insulated Gate Bipolar Transistor designed for power control applications. With its N-CHANNEL configuration and series connected elements, this transistor offers superior performance and efficiency. Built with a built-in diode and real-time clock, this versatile component provides added functionality and convenience. Trust in Mitsubishi Electric's reputation for excellence in electronics to deliver a reliable solution for your power needs. Upgrade your systems today with the CM200DU-12F and experience the benefits of top-notch technology at your fingertips.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs have better conductivity and lower ON resistance, which leads to higher efficiency and better performance in power control applications.

Maximum VCEsat: 2.2 V

Low VCEsat helps in reducing power losses and improving efficiency of the device during operation.

Maximum Power Dissipation (Abs): 590 W

High power dissipation capability allows the device to handle large amounts of power and maintain stability under high load conditions.

Maximum Collector-Emitter Voltage: 600 V

With a high collector-emitter voltage rating, this IGBT can be used in high voltage applications without the risk of breakdown.

Maximum Collector Current (IC): 200 A

High collector current rating allows the IGBT to handle large current flows, making it suitable for power control applications requiring high current handling capabilities.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the IGBT can withstand higher temperatures without compromising its performance, ensuring reliable operation in various environments.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM200DU-12F attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2.2 V

Trade Compliance

CM200DU-12F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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