Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Mitsubishi Electric's CM150DY-12NF is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.2V and Max IC of 150A, it operates at temperatures up to 150°C. The device has a Max VCE of 600V and comes in a RECTANGULAR package style for efficient heat dissipation.
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N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.
This configuration allows for higher voltage handling capability and better overall performance in power control scenarios.
The low VCEsat value indicates minimal power loss during operation, ensuring high efficiency and lower heat generation.
Having 7 terminals provides flexibility in circuit design and allows for greater control over power flow and switching functions.
With a maximum power dissipation of 590 W, this IGBT can handle high power levels without overheating, ensuring long-term reliability.
The high collector-emitter voltage rating makes this IGBT suitable for applications requiring high voltage switching and control.
A high collector current rating of 150 A allows for handling large currents, making this IGBT suitable for high-power applications.
Insulated Gate Bipolar Transistors (IGBT) CM150DY-12NF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric
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CM150DY-12NF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.
LL4148
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);
1N4148WT
Onsemi
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
BSS123-7-F
Diodes Incorporated
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
M24308/2-1F
Adi Electronics
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
LM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Terry Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;
2N2222A
Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Daco Semiconductor
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SS14
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
SMBJ18CA
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
NE555D
Texas Instruments
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
ATMEGA328P-AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 32; Package Code: TQFP; Package Shape: SQUARE;
Goodwork Semiconductor
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
Frontier Electronics
IRGP50B60PDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 370 W; Maximum Collector Current (IC): 75 A; Maximum Fall Time (tf): 65 ns;
SKM200GB126D
Semikron International
SKM200GB126D by Semikron is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.15V, IC of 260A, and toff of 650ns. Ideal for POWER CONTROL applications due to its high voltage rating of 1200V and fast ton at 300ns.
IXXX300N60B3
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 550 A; Maximum Collector-Emitter Voltage: 600 V;
FP20R06W1E3B11BOMA1
Infineon Technologies
Infineon Technologies' FP20R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 600V VCE, 27A IC, and 250ns toff. Ideal for power control applications due to its complex configuration and UL approval.
IKY75N120CH3XKSA1
IKY75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and offers fast turn-off time of 468ns.
AUIRGP4066D1-E
AUIRGP4066D1-E by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 140A max collector current, and 454W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and fast switching times of 100ns rise and 80ns fall.
FS150R12KE3BOSA1
FS150R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 200A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial settings due to its isolated case connection and fast switching capabilities.
ISL9V3040D3STV
ISL9V3040D3STV by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.65 V and a max IC of 21 A. Ideal for automotive ignition applications, it features a built-in diode and resistor, operates at temperatures ranging from -55 to 175 °C, and has a peak reflow temperature of 260 C.
IKW20N60TFKSA1
IKW20N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a turn-off time of 299ns and turn-on time of 36ns, suitable for high-power switching in various industries.
IRG4RC10UDTRLP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 8.5 A; Transistor Application: POWER CONTROL; JEDEC-95 Code: TO-252AA;
STGB30V60DF
STMicroelectronics
STMicroelectronics' STGB30V60DF is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a built-in diode, 225ns turn-off time, and operates up to 175°C.
AUIRGB4062D1
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 246 W; Maximum Collector Current (IC): 59 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Fall Time (tf): 40 ns;
IRG7PH42UD-EP
IRG7PH42UD-EP by Infineon is an N-channel IGBT with 1200V max collector-emitter voltage and 85A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a max power dissipation of 320W and operating temperature of 150°C, it offers fast switching times of 41ns rise, 86ns fall, and 444ns turn-off.
IKW25N120H3
IKW25N120H3 by Infineon Technologies is a N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and max collector current of 50A. It is used for power control applications, offering a nominal turn-off time of 397ns and max power dissipation of 326W.
FGH80N60FD2TU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Qualification: Not Qualified;
AUIRG4BC30USTRL
AUIRG4BC30USTRL by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 23A. It has a nominal turn-off time of 320ns, making it ideal for power control applications requiring fast switching speeds and high voltage handling capabilities. The package style is small outline with gull wing terminals, suitable for surface mount configurations in various electronic devices.
IRG4PH30KPBF
IRG4PH30KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 42W. It is designed for MOTOR CONTROL applications, featuring a single configuration and a package style of FLANGE MOUNT. With a nominal turn on time of 53ns and max operating temperature of 150°C, it offers efficient performance in various industrial settings.
IXGT6N170AHV
Littelfuse
IXGT6N170AHV by Littelfuse is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 7V, it has a collector-emitter voltage of 1700V and can handle a collector current of 6A. This surface-mount transistor operates b/w -55 to 150°C, making it suitable for various power control systems.
STGP6NC60HD
STGP6NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 222ns. Package style is flange mount with through-hole terminals.
IKW30N65EL5XKSA1
IKW30N65EL5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 650V and Max Collector Current of 85A. It has a Nominal Turn Off Time of 520ns and Nominal Turn On Time of 44ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals, suitable for FLANGE MOUNT installation.
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CM150TX-24S
Mitsubishi Electric
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1150 W; Maximum Collector Current (IC): 150 A; Package Style (Meter): FLANGE MOUNT;
CM150TX-24S1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 935 W; Maximum Collector Current (IC): 150 A; Maximum Gate-Emitter Threshold Voltage: 6.6 V;
CM150TL-12NF
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 730 W; Maximum Collector Current (IC): 150 A; No. of Terminals: 20;
CM150DY-24A
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 150 A; No. of Elements: 2;
CM150DY-24T
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1610 W; Maximum Collector Current (IC): 150 A; Maximum Turn Off Time (toff): 800 ns;
CM150MXUD-24T1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 565 W; Maximum Collector Current (IC): 150 A; Minimum Operating Temperature: -40 Cel;
CM150TX-24T
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 850 W; Maximum Collector Current (IC): 150 A; No. of Elements: 6;
CM150DY-12H
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 150 A; Qualification: Not Qualified;
CM150DY-24H
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 150 A; Maximum Collector-Emitter Voltage: 1200 V;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 150 A; Peak Reflow Temperature (C): NOT SPECIFIED;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 150 A; Case Connection: ISOLATED;
CM150DY-34A
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Case Connection: ISOLATED; Package Shape: RECTANGULAR;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1600 W; Maximum Collector Current (IC): 150 A; Maximum Operating Temperature: 150 Cel;
CM150DY-28H
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 150 A; No. of Elements: 2;
CM150DY-12NF
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 590 W; Maximum Collector Current (IC): 150 A; Peak Reflow Temperature (C): NOT SPECIFIED;
CM150DY-24NF
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Maximum Collector Current (IC): 150 A; Maximum VCEsat: 2.5 V;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR;
CM150DY-13T
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1090 W; Maximum Collector Current (IC): 150 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
CM150DY-34T
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1865 W; Maximum Collector Current (IC): 150 A; Transistor Element Material: SILICON;
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