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2SC1965A

Mitsubishi Electric

2SC1965A by Mitsubishi Electric

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 2 A; Terminal Finish: TIN LEAD;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC1965A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Mitsubishi Electric

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

EMITTER

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

17 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SC1965A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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