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MT25QU512ABB8E12-0SIT

Micron Technology

MT25QU512ABB8E12-0SIT by Micron Technology

MT25QU512ABB8E12-0SIT by Micron Technology is a 512M NOR flash memory with 536870912-bit density. Operating at 166 MHz, it has a thin profile grid array package suitable for industrial applications. With synchronous operation and serial interface, it offers fast programming at 1.8V voltage.

Median Price

$8.296

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 538 parts In-Stock

1+ parts

$5.910

100+ parts

$5.910

1k+ parts

$5.910

10k+ parts

-

538

$5.910

$5.910

$5.910

-

Mouser Electronics

USA . 1,628 parts In-Stock

1+ parts

$7.360

100+ parts

$6.330

1k+ parts

$5.970

10k+ parts

$5.790

1,628

$7.360

$6.330

$5.970

$5.790

Arrow

USA . 1,057 parts In-Stock

1+ parts

$9.232

100+ parts

$7.435

1k+ parts

$6.856

10k+ parts

$6.617

1,057

$9.232

$7.435

$6.856

$6.617

Farnell

UK . 2,160 parts In-Stock

1+ parts

$9.400

100+ parts

$6.600

1k+ parts

$6.510

10k+ parts

-

2,160

$9.400

$6.600

$6.510

-

Element14

Singapore . 2,160 parts In-Stock

1+ parts

$13.710

100+ parts

$11.380

1k+ parts

-

10k+ parts

-

2,160

$13.710

$11.380

-

-

Verical

USA . 12,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$5.203

12,500

-

-

-

$5.203

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,428 parts In-Stock

1+ parts

$4.056

100+ parts

-

1k+ parts

-

10k+ parts

-

2,428

$4.056

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$8.100

100+ parts

-

1k+ parts

-

10k+ parts

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10

$8.100

-

-

-

Component Sense

UK . 8,795 parts In-Stock

1+ parts

$27.000

100+ parts

$21.600

1k+ parts

$18.000

10k+ parts

$18.000

8,795

$27.000

$21.600

$18.000

$18.000

NAC Semi

USA . 12,587 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$9.950

12,587

-

-

-

$9.950

Chip Stock

USA . 10,700 parts In-Stock

1+ parts

-

100+ parts

-

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10,700

-

-

-

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Cyclops Electronics Ltd

UK . 7,662 parts In-Stock

1+ parts

-

100+ parts

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7,662

-

-

-

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IBS Electronics

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$84.430

10k+ parts

-

7,500

-

-

$84.430

-

Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,000

-

-

-

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Vyrian

USA . 2,688 parts In-Stock

1+ parts

-

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2,688

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-

-

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Dan-Mar Components

USA . 890 parts In-Stock

1+ parts

-

100+ parts

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890

-

-

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Bristol Electronics

USA . 405 parts In-Stock

1+ parts

-

100+ parts

-

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405

-

-

-

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BCID Electronics Ltd.

Israel . 391 parts In-Stock

1+ parts

-

100+ parts

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391

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-

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Resion

USA . 40 parts In-Stock

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40

-

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Prism Electronics

USA . 2 parts In-Stock

1+ parts

-

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-

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-

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2

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 10,000 parts In-Stock

1+ parts

$3.105

100+ parts

$2.950

1k+ parts

$2.950

10k+ parts

-

10,000

$3.105

$2.950

$2.950

-

Semicontronic

India . 6,103 parts In-Stock

1+ parts

$3.630

100+ parts

$3.539

1k+ parts

$3.521

10k+ parts

-

6,103

$3.630

$3.539

$3.521

-

Ampacity Inc.

Singapore . 2,977 parts In-Stock

1+ parts

$3.630

100+ parts

-

1k+ parts

-

10k+ parts

-

2,977

$3.630

-

-

-

Corphita

USA . 86 parts In-Stock

1+ parts

$3.843

100+ parts

-

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-

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86

$3.843

-

-

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Aztec Data Supply Inc.

USA . 23,518 parts In-Stock

1+ parts

$3.900

100+ parts

-

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-

10k+ parts

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23,518

$3.900

-

-

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Corohmni

South Africa . 1,857 parts In-Stock

1+ parts

$5.093

100+ parts

-

1k+ parts

-

10k+ parts

-

1,857

$5.093

-

-

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$8.100

100+ parts

-

1k+ parts

$7.695

10k+ parts

$7.533

2,000

$8.100

-

$7.695

$7.533

Continental Prestige Electronics

USA . 1,891 parts In-Stock

1+ parts

$8.960

100+ parts

$6.630

1k+ parts

-

10k+ parts

-

1,891

$8.960

$6.630

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Glotronic Ltd.

UK . 6,284 parts In-Stock

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6,284

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 3,807 parts In-Stock

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3,807

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-

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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-

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Legend Electronics Inc. (Excess)

USA . 2,779 parts In-Stock

1+ parts

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2,779

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-

-

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Futuretech Components

Singapore . 2,500 parts In-Stock

1+ parts

-

100+ parts

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2,500

-

-

-

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GreenTree Electronics

Israel . 2,500 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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2,500

-

-

-

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RC Electronics

USA . 1,715 parts In-Stock

1+ parts

-

100+ parts

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1,715

-

-

-

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Speed Components Ltd (Excess)

Israel . 691 parts In-Stock

1+ parts

-

100+ parts

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691

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Robosynatics

Brazil . 350 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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350

-

-

-

-

Lucentia Tech

USA . 350 parts In-Stock

1+ parts

-

100+ parts

$3.496

1k+ parts

$3.496

10k+ parts

$3.496

350

-

$3.496

$3.496

$3.496

Overview

Elevate your electronics with the MT25QU512ABB8E12-0SIT by Micron Technology, a cutting-edge Flash Memory device that offers unparalleled quality and reliability. Designed for industrial applications, this product boasts a sleek rectangular package style and operates synchronously at a maximum clock frequency of 166 MHz. With a memory density of 536870912 bits and a wide operating temperature range, the MT25QU512ABB8E12-0SIT delivers exceptional performance and value. Upgrade your systems today with Micron Technology's top-of-the-line Flash Memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Being surface mountable allows for easy integration into circuit boards, saving space and simplifying assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures high-speed data transfer and efficient performance.

Nominal Supply Voltage (V): 1.8

The low nominal supply voltage helps in reducing power consumption and extending battery life in devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions and maintain reliability.

Organization: 512MX1

The 512MX1 organization offers a high memory density for storing large amounts of data efficiently.

Width: 6 mm

The compact width of 6 mm allows for space-saving installation in tight layouts or small devices.

Maximum Clock Frequency (fCLK): 166 MHz

The high maximum clock frequency enables fast data transfer speeds, making the product suitable for demanding applications.

Temperature Grade: INDUSTRIAL

Designed for industrial use, the product meets stringent temperature requirements and reliability standards for harsh environments.

Memory Density: 536870912 bit

With a high memory density of 536870912 bits, the product offers ample storage capacity for various data-intensive applications.

Technical Specifications

Flash Memory MT25QU512ABB8E12-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Trade Compliance

MT25QU512ABB8E12-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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