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MT25QU128ABA8E54-0SIT

Micron Technology

MT25QU128ABA8E54-0SIT by Micron Technology

Micron Technology's MT25QU128ABA8E54-0SIT is a 128M Flash Memory IC with 134217728-bit memory density. Operating at 166 MHz, it has a synchronous mode and operates b/w -40 to 85°C. Suitable for industrial applications, it features a serial interface and requires a nominal voltage of 1.8V.

Median Price

$4.500

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

EBV Elektronik

Germany . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$4.500

100+ parts

-

1k+ parts

-

10k+ parts

-

450

$4.500

-

-

-

Chip Stock

USA . 12,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,600

-

-

-

-

Vyrian

USA . 4,617 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,617

-

-

-

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Digiode

USA . 1,940 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,940

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,524 parts In-Stock

1+ parts

$2.000

100+ parts

-

1k+ parts

-

10k+ parts

-

4,524

$2.000

-

-

-

Continental Prestige Electronics

USA . 1,278 parts In-Stock

1+ parts

$4.500

100+ parts

-

1k+ parts

-

10k+ parts

$4.410

1,278

$4.500

-

-

$4.410

Argo Parts USA

USA . 766 parts In-Stock

1+ parts

$4.500

100+ parts

-

1k+ parts

-

10k+ parts

-

766

$4.500

-

-

-

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$4.590

100+ parts

$4.590

1k+ parts

$4.590

10k+ parts

-

50

$4.590

$4.590

$4.590

-

Aztec Data Supply Inc.

USA . 831 parts In-Stock

1+ parts

$4.855

100+ parts

-

1k+ parts

-

10k+ parts

-

831

$4.855

-

-

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Corohmni

South Africa . 882 parts In-Stock

1+ parts

$5.169

100+ parts

-

1k+ parts

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10k+ parts

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882

$5.169

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-

-

Perfect Parts

USA . 11,200 parts In-Stock

1+ parts

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100+ parts

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11,200

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Kepictronics

USA . 3,540 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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3,540

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-

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Corphita

USA . 2,349 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,349

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-

-

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Overview

Unlock the power of Micron Technology's MT25QU128ABA8E54-0SIT Flash Memory, a cutting-edge solution that offers unparalleled performance and reliability. Perfect for industrial applications, this flash memory delivers lightning-fast data transfer speeds and efficient operation in extreme temperatures. With a wide operating voltage range and high clock frequency, this product is designed to meet the demands of today's technology-driven world. Trust Micron Technology to provide you with the quality and innovation you need to stay ahead of the competition. Elevate your systems with the MT25QU128ABA8E54-0SIT Flash Memory and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances durability and reliability of the product, making it a good choice for long-term use.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into a variety of systems, making this product convenient and versatile.

Package Shape: SQUARE

The square package shape provides efficiency in space utilization and layout design, making this product suitable for compact and well-organized setups.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise and coordinated data transfer, enhancing the efficiency and performance of the product.

Nominal Supply Voltage: 1.8V

The low nominal supply voltage of 1.8V offers energy efficiency and reduces power consumption, making this product a cost-effective and eco-friendly option.

No. of Terminals: 15

The 15 terminals provide ample connectivity options and flexibility for various system configurations, enhancing the compatibility and scalability of the product.

Package Style: GRID ARRAY

The grid array package style offers a compact and secure packaging solution, ensuring easy handling and protection of the product during transportation and installation.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this product is suitable for industrial or harsh environments, guaranteeing reliability and stability under challenging conditions.

Organization: 128MX1

The organization of 128MX1 facilitates efficient data storage and retrieval processes, making this product ideal for high-speed and high-capacity memory applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures functionality even in extreme cold climates, making this product versatile and reliable in various environments.

Terminal Position: BOTTOM

The bottom terminal position offers secure and stable connections, preventing disconnections and disruptions during operation, ensuring continuous and uninterrupted performance of the product.

Maximum Clock Frequency: 166 MHz

With a high maximum clock frequency of 166 MHz, this product delivers fast data processing speeds, enhancing overall system performance and efficiency.

Minimum Supply Voltage: 1.7V

The minimum supply voltage of 1.7V ensures reliable operation even under low power conditions, making this product suitable for battery-powered devices or portable applications.

Programming Voltage: 1.8V

The programming voltage of 1.8V ensures easy and efficient programming of the memory, simplifying the setup and configuration process for users.

Temperature Grade: INDUSTRIAL

The industrial temperature grade certification guarantees reliability and durability in harsh industrial environments, making this product a robust and dependable choice for demanding applications.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high noise immunity, ensuring efficient and reliable operation in various electronic devices.

Parallel or Serial: SERIAL

The serial interface allows for efficient data transfer and communication between devices, enabling seamless integration and compatibility with modern systems.

Terminal Form: BALL

The ball terminal form provides secure connections and facilitates easy installation and removal of the product, ensuring convenience and flexibility in system maintenance and upgrades.

No. of Words: 134217728 words

With a high number of words available, this product offers ample storage capacity for data-intensive applications, making it suitable for large-scale memory requirements.

No. of Words Code: 128M

The 128M words code ensures efficient data management and organization, enhancing the performance and reliability of the product in a variety of applications.

Maximum Supply Voltage: 2V

The high maximum supply voltage of 2V provides flexibility in power input options, ensuring compatibility and safety in different operating conditions.

Memory Density: 134217728 bit

The high memory density of 134217728 bits enables efficient data storage and management, making this product an ideal choice for high-capacity memory solutions.

Memory IC Type: FLASH

The flash memory IC type offers fast and reliable data storage and retrieval capabilities, making this product suitable for high-performance computing and data-intensive applications.

Technical Specifications

Flash Memory MT25QU128ABA8E54-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

S-PBGA-B15

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

15

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

MT25QU128ABA8E54-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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