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IXYX200N65B3

Littelfuse

IXYX200N65B3 by Littelfuse

Littelfuse IXYX200N65B3 is an N-CHANNEL IGBT with 650V VCEsat, 410A IC, and 1.7V VGE. Ideal for POWER CONTROL applications due to its high power dissipation of 1560W and fast turn-off time of 700ns. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 47 parts In-Stock

1+ parts

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47

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 450 parts In-Stock

1+ parts

$26.050

100+ parts

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450

$26.050

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Microchip USA

USA . 4,926 parts In-Stock

1+ parts

$67.880

100+ parts

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4,926

$67.880

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Aranea Global

USA . 500 parts In-Stock

1+ parts

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500

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Overview

Unlock the power of precise and efficient power control with the IXYX200N65B3 by Littelfuse. Manufactured with top-notch quality and expertise, this Insulated Gate Bipolar Transistor (IGBT) offers exceptional performance and reliability in a variety of applications. With its N-CHANNEL configuration and built-in resistor, this transistor provides customers with unmatched value, benefits, and advantages. Experience seamless operation and maximum power dissipation with this cutting-edge product that is designed to exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have better performance characteristics and lower conduction losses compared to P-channel IGBTs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor helps in simplifying the circuit design and can improve transient stability.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring efficient and reliable operation.

Maximum VCEsat: 1.7 V

Low VCEsat indicates lower conduction losses and higher efficiency in power switching applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection in the circuit board.

Nominal Turn Off Time (toff): 700 ns

Fast turn-off time helps in reducing switching losses and improving overall efficiency.

Maximum Power Dissipation (Abs): 1560 W

High power dissipation capability allows for handling significant power loads without overheating.

Package Style (Meter): IN-LINE

In-line package style offers compatibility with standard mounting techniques and applications.

Maximum Operating Temperature: 175 °C

Good thermal performance at high temperatures ensures stable operation in demanding environments.

Maximum Collector-Emitter Voltage: 650 V

High VCE voltage rating enables the IGBT to handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics and reliability for power switching applications.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating ensures safe and reliable operation of the IGBT.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows for operation in extreme cold environments.

Maximum Collector Current (IC): 410 A

High collector current rating allows for handling large current loads in power applications.

Maximum Gate-Emitter Threshold Voltage: 6 V

Low gate-emitter threshold voltage ensures efficient switching performance at low voltage levels.

Terminal Position: SINGLE

Single terminal position simplifies connection and integration into the circuit board.

Case Connection: COLLECTOR

Collector case connection simplifies the circuit layout and enhances thermal performance.

Nominal Turn On Time (ton): 170 ns

Fast turn-on time allows for quick response and switching speed in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYX200N65B3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

700 ns

Nominal Turn On Time (ton):

170 ns

Maximum VCEsat:

1.7 V

Trade Compliance

IXYX200N65B3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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