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MIXA225RF1200TSF

IXYS Corporation

MIXA225RF1200TSF by IXYS Corporation

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 360 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 245 parts In-Stock

1+ parts

$140.599

100+ parts

-

1k+ parts

-

10k+ parts

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245

$140.599

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-

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MIXA225RF1200TSF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Maximum VCEsat:

2.1 V

Trade Compliance

MIXA225RF1200TSF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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