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IXXH30N60C3D1

IXYS Corporation

IXXH30N60C3D1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 60 A; Transistor Element Material: SILICON;

Median Price

$5.920

Lifecycle Status

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8

In-Stock Inventory

1k+

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Chip1Stop

Japan . 2 parts In-Stock

1+ parts

$4.866

100+ parts

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2

$4.866

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Farnell

UK . 300 parts In-Stock

1+ parts

$5.920

100+ parts

$3.130

1k+ parts

$2.450

10k+ parts

-

300

$5.920

$3.130

$2.450

-

DigiKey

USA . 8 parts In-Stock

1+ parts

$7.180

100+ parts

$4.133

1k+ parts

$2.971

10k+ parts

$2.971

8

$7.180

$4.133

$2.971

$2.971

Newark

USA . 300 parts In-Stock

1+ parts

$8.560

100+ parts

$5.180

1k+ parts

$4.350

10k+ parts

-

300

$8.560

$5.180

$4.350

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Element14

Singapore . 300 parts In-Stock

1+ parts

$9.940

100+ parts

$6.010

1k+ parts

$5.120

10k+ parts

-

300

$9.940

$6.010

$5.120

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Arrow

USA . 210 parts In-Stock

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$3.019

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$3.019

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Verical

USA . 210 parts In-Stock

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$3.019

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210

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$3.019

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.010

100+ parts

$0.919

1k+ parts

$0.828

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-

5,000

$1.010

$0.919

$0.828

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Ampacity Inc.

Singapore . 49 parts In-Stock

1+ parts

$3.860

100+ parts

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49

$3.860

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Component Stockers USA

USA . 400 parts In-Stock

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$4.420

100+ parts

$4.950

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400

$4.420

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Microchip USA

USA . 6,317 parts In-Stock

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$21.140

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6,317

$21.140

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXXH30N60C3D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

166 ns

Nominal Turn On Time (ton):

57 ns

Maximum VCEsat:

2.4 V

Trade Compliance

IXXH30N60C3D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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