Loading...

IXSN55N120AU1

IXYS Corporation

IXSN55N120AU1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 110 A; No. of Elements: 1;

Median Price

$23.760

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ARCEL Power Electronics

France . 1 parts In-Stock

1+ parts

$23.760

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$23.760

-

-

-

Huijzer Components

Netherlands . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 50 parts In-Stock

1+ parts

$33.510

100+ parts

-

1k+ parts

$23.459

10k+ parts

$23.459

50

$33.510

-

$23.459

$23.459

Microchip USA

USA . 257 parts In-Stock

1+ parts

$53.956

100+ parts

-

1k+ parts

-

10k+ parts

-

257

$53.956

-

-

-

Perfect Parts

USA . 372 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

372

-

-

-

-

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXSN55N120AU1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

HIGH SPEED

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

8 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

500 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1500 ns

Nominal Turn On Time (ton):

390 ns

Maximum VCEsat:

4 V

Trade Compliance

IXSN55N120AU1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-633-4667, 5961016334667

NIIN

016334667

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.