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HGTD7N60B3S

Intersil

HGTD7N60B3S by Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 14 A; Package Style (Meter): SMALL OUTLINE;

Median Price

$0.818

Lifecycle Status

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5

In-Stock Inventory

1k+

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Rochester

USA . 703 parts In-Stock

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$0.885

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$0.735

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$0.655

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$0.655

DigiKey

USA . 703 parts In-Stock

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$0.750

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$0.750

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Digiode

USA . 269 parts In-Stock

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$0.690

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Vyrian

USA . 339 parts In-Stock

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$0.726

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American Microsemiconductor Inc.

USA . 39 parts In-Stock

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$8.760

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39

$8.760

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Corphita

USA . 429 parts In-Stock

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$0.653

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Microchip USA

USA . 6,334 parts In-Stock

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$4.550

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,573 parts In-Stock

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Supply Digital

USA . 767 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTD7N60B3S attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Intersil

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

80 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

350 ns

Nominal Turn On Time (ton):

46 ns

Trade Compliance

HGTD7N60B3S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Intersil

Japanese semiconductor company Renesas acquired Intersil on February 24, 2017. Intersil Corporation (NASDAQ:ISIL), a wholly owned subsidiary of Renesas Electronics Corporation, is a leading provider of innovative power management and precision analog solutions. The company's products form the building blocks of increasingly intelligent, mobile and power hungry electronics enabling advances in power management to improve efficiency and extend battery life. With a deep portfolio of intellectual property and a rich history of design and process innovation, Intersil is the trusted partner to leading companies in some of the world's largest markets, including the industrial and infrastructure, mobile computing, automotive and aerospace.

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