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IRGB20B60PD1

International Rectifier

IRGB20B60PD1 by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Voltage: 20 V;

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Digiode

USA . 322 parts In-Stock

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Vyrian

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Modulus Dynamics

Lithuania . 14,043 parts In-Stock

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$1.452

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S.R.D Solutions

India . 15,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,128 parts In-Stock

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Authorized Procurement Solutions

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Alle Elektronik GmbH

Germany . 4,752 parts In-Stock

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Glotronic Ltd.

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Corphita

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GreenTree Electronics

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Perfect Parts

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGB20B60PD1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

17 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

8 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

121 ns

Nominal Turn On Time (ton):

25 ns

Trade Compliance

IRGB20B60PD1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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