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IS42S16160J-6BL-TR

Integrated Silicon Solution

IS42S16160J-6BL-TR by Integrated Silicon Solution

IS42S16160J-6BL-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V and is ideal for commercial applications requiring high-speed memory performance in a compact GRID ARRAY package style.

Median Price

$5.730

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,923 parts In-Stock

1+ parts

$5.730

100+ parts

$5.060

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1,923

$5.730

$5.060

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 5,130 parts In-Stock

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5,130

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

QUARKTWIN TECHNOLOGY LTD

USA . 10,323 parts In-Stock

1+ parts

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10,323

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Overview

Upgrade your electronics with the IS42S16160J-6BL-TR by Integrated Silicon Solution, a top-tier DRAM that guarantees exceptional performance and reliability. Manufactured with precision and expertise, this product offers unparalleled value and benefits to customers across various applications. With its synchronous operating mode and self-refresh capabilities, this memory IC delivers seamless functionality while maintaining a slim profile and fine pitch design. Trust in Integrated Silicon Solution for cutting-edge technology and superior quality, ensuring optimal performance in all your electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight package for the DRAM, making it easy to handle and install in various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination between the memory controller and the DRAM, optimizing memory performance.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal supply voltage for efficient power consumption and stable performance of the DRAM.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation, enhancing overall efficiency of the DRAM.

Memory IC Type: SYNCHRONOUS DRAM

Synchronous DRAM offers fast and synchronized data access, ideal for applications requiring high-speed memory access.

Maximum Access Time: 5.4 ns

Fast access time ensures quick data retrieval, reducing latency and improving overall system performance.

Technical Specifications

DRAM IS42S16160J-6BL-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

S-PBGA-B54

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

IS42S16160J-6BL-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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