Loading...

PTFA220041MV4

Infineon Technologies

PTFA220041MV4 by Infineon Technologies

PTFA220041MV4 by Infineon is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the S BAND frequency range and has a max temperature of 200°C. Ideal for amplifier applications, this transistor is surface mountable and features a plastic/epoxy package body.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 11,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,200

-

-

-

-

Digiode

USA . 647 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

647

-

-

-

-

Vyrian

USA . 316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

316

-

-

-

-

Speed Components Ltd

Israel . 140 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

140

-

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 16,075 parts In-Stock

1+ parts

$0.398

100+ parts

$0.382

1k+ parts

$0.366

10k+ parts

-

16,075

$0.398

$0.382

$0.366

-

Corohmni

South Africa . 324 parts In-Stock

1+ parts

$0.402

100+ parts

-

1k+ parts

-

10k+ parts

-

324

$0.402

-

-

-

Aztec Data Supply Inc.

USA . 2,262 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

10k+ parts

-

2,262

$0.570

-

-

-

Ampacity Inc.

Singapore . 1,452 parts In-Stock

1+ parts

$4.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,452

$4.050

-

-

-

AZTECH Wire

Italy . 534 parts In-Stock

1+ parts

$8.018

100+ parts

-

1k+ parts

-

10k+ parts

-

534

$8.018

-

-

-

Semicontronic

India . 622 parts In-Stock

1+ parts

$25.050

100+ parts

$24.424

1k+ parts

$24.298

10k+ parts

-

622

$25.050

$24.424

$24.298

-

Lixinc

USA . 17,068 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,068

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 13,714 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,714

-

-

-

-

A-Z Elektronik GmbH

Germany . 10,284 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,284

-

-

-

-

Authorized Procurement Solutions

USA . 6,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,500

-

-

-

-

Kepictronics

USA . 2,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,300

-

-

-

-

Argo Parts USA

USA . 1,793 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,793

-

-

-

-

Corphita

USA . 730 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

730

-

-

-

-

Metaverse IC Inc.

Canada . 595 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

595

-

-

-

-

RC Electronics

USA . 556 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

556

-

-

-

-

Continental Prestige Electronics

USA . 434 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

434

-

-

-

-

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Unlock the power of cutting-edge technology with the PTFA220041MV4 RF Power Field Effect Transistor by Infineon Technologies. This N-CHANNEL amplifier offers unparalleled performance and reliability, making it the ideal choice for a wide range of applications. From enhancing signal strength to maximizing efficiency, this transistor delivers exceptional value and benefits to customers. Trust in the quality and innovation of Infineon Technologies to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable and long-lasting applications.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have lower ON-resistance and higher current-carrying capabilities, making them an efficient choice for amplification.

Configuration: SINGLE

Single configuration simplifies the design and wiring of the circuit, making it easier to integrate into various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in boosting signal strength.

Minimum DS Breakdown Voltage: 65 V

A higher breakdown voltage allows for higher voltages to be safely handled, improving the overall reliability and durability of the product.

Package Shape: SQUARE

Square packages help in efficient PCB layout and space-saving design, making it suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low ON-resistance, resulting in improved performance and energy efficiency.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, the FET can perform reliably in harsh environmental conditions without overheating.

Case Connection: SOURCE

Source connection provides a low-impedance path for current flow, allowing for efficient amplification and signal processing.

Technical Specifications

RF Power Field Effect Transistors (FET) PTFA220041MV4 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

S BAND

JESD-30 Code:

S-PDSO-N10

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

10

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PTFA220041MV4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20