Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Additional Features: LOW SATURATION VOLTAGE; Terminal Position: SINGLE;
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Digiode
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Vyrian
Inland Empire Components Inc.
Modulus Dynamics
$1.041
$0.999
$0.958
A-Z Elektronik GmbH
Alle Elektronik GmbH
Authorized Procurement Solutions
Glotronic Ltd.
Corphita
Microchip USA
Insulated Gate Bipolar Transistors (IGBT) IRGS14C40L attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
JEDEC-95 Code:
JESD-30 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
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Package Shape:
Package Style (Meter):
Polarity or Channel Type:
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Transistor Application:
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Nominal Turn On Time (ton):
IRGS14C40L Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
CRGCQ0805F10R
TE Connectivity
TE Connectivity's CRGCQ0805F10R is a 10 ohm fixed resistor with 1% tolerance and 400 ppm/°C temperature coefficient. It is a surface mount thick film resistor in an 0805 package, suitable for applications requiring precise resistance values in compact electronic circuits.
2N7002
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LM317T
Fairchild Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Output Current-1: 1.5 A; No. of Outputs: 1; Qualification Status: Not Qualified;
LM555CN
Intersil
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
LM78L05ACMX/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
Dc Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;
LM107H/883
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
1N4148WS
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Rectron
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Central Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
43025-0400
Molex
The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Hitano Enterprise
Weitron Technology
EU2B-YS2J03C
Idec
ROTARY SWITCH;
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Functions: 1;
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
IXDH30N120D1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 435 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
AIKW20N60CTXKSA1
Infineon's AIKW20N60CTXKSA1 is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 2.05V VCE. Ideal for power control applications, it features a built-in diode and operates b/w -40 to 175°C.
CM900DU-24NF
Mitsubishi Electric
Mitsubishi Electric's CM900DU-24NF is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.5V and can handle up to 900A collector current, making it ideal for high-power control applications. With a max power dissipation of 2550W and operating temperature of 150°C, it offers reliable performance in demanding environments.
STGW45HF60WD
STMicroelectronics
STGW45HF60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 250ns.
ISL9V3040P3
Onsemi
ISL9V3040P3 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a Max Collector-Emitter Voltage of 450V and can handle a Max Collector Current of 21A. This IGBT comes in a RECTANGULAR package style with THROUGH-HOLE terminals.
FF900R12IE4BOSA1
FF900R12IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 900A. Ideal for power control applications due to its fast turn on time of 350ns and turn off time of 940ns at a max operating temperature of 175°C.
FGL60N100BNTDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;
IKP20N60TXKSA1
IKP20N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 40A. It is designed for power control applications, offering a nominal turn-off time of 299ns and a nominal turn-on time of 36ns.
IRG4PC50FPBF
IRG4PC50FPBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 70A max collector current. It has a 190ns max fall time, making it suitable for high-power applications like motor drives and inverters. The package style is flange mount with through-hole terminals.
FGH40N60SMDF-F085
FGH40N60SMDF-F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.5V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 123ns, tf of 20ns, and can handle up to 349W power dissipation. Operating b/w -55°C to 175°C, it features a max VCE of 600V and gate-emitter voltage of 20V.
IRG4BC40UPBF
IRG4BC40UPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 160W max power dissipation. Ideal for power control applications, it has a single configuration in a rectangular package with through-hole terminals. Operating temperature ranges from -55 to 150°C.
IKW50N60DTPXKSA1
IKW50N60DTPXKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and a nominal turn-off time of 332ns. The transistor operates in temperatures as low as -40°C, making it suitable for various industrial uses.
IRG4PC30UPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Transistor Application: POWER CONTROL;
AUIRG4BC30U-S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Qualification: Not Qualified;
IXGH10N170
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 20 A; JEDEC-95 Code: TO-247AD;
FGB20N60SFD-F085
FGB20N60SFD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 208W Ptot. Ideal for power control applications due to its fast tr of 21ns and tf of 43ns. AEC-Q101 certified for automotive use, it features a small outline package style.
BSM150GB120DN2
Infineon's BSM150GB120DN2 is a 1200V IGBT with 3.2V VCEsat, 1250W power dissipation, and 210A collector current. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
IXXX160N65C4
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 290 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Operating Temperature: 175 Cel;
ISL9V3040D3ST-F085C
ISL9V3040D3ST-F085C by Onsemi is an N-CHANNEL IGBT transistor with a VCEsat of 1.65V and IC of 21A, ideal for automotive ignition applications. It has a small outline package style, operates b/w -55 to 175 °C, and features a gate-emitter threshold voltage of 2.2V. The device offers fast rise/fall times (0.007/0.015 ns) making it suitable for high-speed switching requirements in automotive systems.
SK15DGDL126ET
Semikron International
SK15DGDL126ET by Semikron International is an N-CHANNEL IGBT with 1200V VCEsat, 22A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.
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IRGS14C40LPBF
IRGS14C40LPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 370V and a max collector current of 20A. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a surface-mount package style. The transistor has a max power dissipation of 125W and can operate at temperatures up to 175°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Peak Reflow Temperature (C): 260;
IRGS4615DPBF
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 99 W; Maximum Collector Current (IC): 23 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Terminal Finish: MATTE TIN OVER NICKEL;
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 99 W; Maximum Collector Current (IC): 23 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Gate-Emitter Voltage: 20 V;
IRGS4056DPBF
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 24 A; Maximum Rise Time (tr): 24 ns; Package Style (Meter): SMALL OUTLINE;
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 24 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; No. of Terminals: 2;
IRGS4607DPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 11 A; Transistor Application: POWER CONTROL; Nominal Turn Off Time (toff): 95 ns;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 11 A; Nominal Turn On Time (ton): 51 ns; No. of Elements: 1;
IRGS15B60KDTRRP
N-Channel; Maximum Collector Current (IC): 31 A; Nominal Turn Off Time (toff): 226 ns; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel; Nominal Turn On Time (ton): 4000 ns;
IRGS15B60KPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 31 A; Maximum Collector-Emitter Voltage: 600 V;
IRGS15B60KDTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 31 A; Case Connection: COLLECTOR; JESD-30 Code: R-PSSO-G2;
IRGS14B40LPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): 18 A; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
IRGS15B60KDTRRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 31 A; Nominal Turn On Time (ton): 52 ns; Terminal Form: GULL WING;
IRGS10B60KDPBFTRR
N-Channel; Maximum Collector Current (IC): 35 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 600 V; Minimum Operating Temperature: -55 Cel; Nominal Turn Off Time (toff): 294 ns;
IRGS10B60KDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 22 A; Maximum Time At Peak Reflow Temperature (s): 30;
IRGS10B60KDTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 22 A; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
IRGS15B60KTRLPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 31 A; Transistor Element Material: SILICON;
IRGS14C40LTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Threshold Voltage: 2.2 V;
IRGS10B60KDTRRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 22 A; Terminal Position: SINGLE; Terminal Form: GULL WING;
IRGS14C40LTRR
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Nominal Turn On Time (ton): 3700 ns; Transistor Application: AUTOMOTIVE IGNITION;
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