Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Infineon IPL60R210P6AUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 52A max pulsed drain current, 0.21 ohm RDS(on), and 419mJ avalanche energy rating. Suitable for enhancement mode operation in various power electronics systems.
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Provides good insulation and protection for the internal components, ensuring durability and reliability.
Allows for efficient switching and control of current flow in the circuit.
Simplified design with built-in diode for reverse current protection, reducing the need for additional components.
Designed specifically for switching applications, ensuring optimal performance in such scenarios.
Suitable for easy and efficient surface mounting on circuit boards, saving space and reducing assembly time.
Capable of handling high voltage levels, making it suitable for a variety of applications.
Compact square shape that allows for efficient placement on circuit boards.
Enhancement mode operation provides fast switching speeds and low on-resistance for improved performance.
High current handling capability for demanding applications.
Avalanche energy rating ensures protection against voltage spikes and surges.
Provides necessary connections for proper functioning in the circuit.
Compact small outline package for efficient integration into electronic devices.
Uses MOSFET technology for high efficiency and reliability in switching applications.
Silicon material ensures high performance and stability in various operating conditions.
Tin finish provides good conductivity and solderability for reliable connections.
Low ON resistance for efficient power switching and minimal power loss.
Single terminal position for easy and convenient connection in the circuit.
Meets standard moisture sensitivity level to ensure reliability in various environmental conditions.
Drain connection for efficient current flow control and protection in the circuit.
Power Field Effect Transistors (FET) IPL60R210P6AUMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
IPL60R210P6AUMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
LM317T/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Shape: RECTANGULAR;
1N4148
Onsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
SMBJ18CA
Microsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CMX
Texas Instruments
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
Nexperia
Hy Electronic
NE555D
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
DS18B20Z
Maxim Integrated
DS18B20Z by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring precise temperature monitoring in compact spaces.
OPA2277UA/2K5
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
FDC5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
NE555DR
NE555DR by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating voltage of 5V, and power supplies ranging from 5-15V. It is a versatile component for pulse generation applications due to its small outline package and commercial temperature grade suitability.
LAN8720AI-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
BAV99
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Sangdest Microelectronics (Nanjing)
1N4148WT
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
International Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
FDMC86139P
FDMC86139P by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage and 30A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.067 ohm RDS(on), and operates in ENHANCEMENT MODE.
IRF640
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;
IRF4905PBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSFM-T3; Operating Mode: ENHANCEMENT MODE;
FDD4685
FDD4685 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for applications requiring high power dissipation up to 69W. Featuring a max Drain Current of 40A and an Avalanche Energy Rating of 121mJ, it operates in Enhancement Mode for efficient performance in various electronic circuits.
IRF9540PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 19 A;
IRF5210PBF
Infineon Technologies
IRF5210PBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W and operates in ENHANCEMENT MODE. With a Drain Current of 40A and 0.06 ohm On Resistance, it offers reliable performance in various electronic systems.
FDS6675BZ
FDS6675BZ by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 55A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package. Operating in ENHANCEMENT MODE, it offers low 0.013 ohm Drain-Source On Resistance and can handle up to 2.5W power dissipation.
IRFH5004TRPBF
The Infineon Technologies IRFH5004TRPBF is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A ID. Ideal for SWITCHING applications, it features a built-in diode, 400A IDM, and 0.0026 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 250W and can withstand temperatures up to 150°C.
IRFP4568PBF
Infineon's IRFP4568PBF is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 684A IDM and 0.0059 ohm RDS(on), it operates in ENHANCEMENT MODE up to 175°C. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in high-power circuits.
FDS3890
FDS3890 by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a SEPARATE configuration with 2 ELEMENTS, built-in DIODE, and 0.044 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE, has a max power dissipation of 2W, and can withstand temperatures up to 175°C.
IRFZ44NLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Terminals: 3;
SPW20N60C3FKSA1
SPW20N60C3FKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, 62.1A IDM, and 0.19 ohm RDS(on). It is used in power applications due to its 690mJ EAS rating, operating at up to 150°C.
IRLML6401TRPBF-1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; No. of Elements: 1;
ATP304-TL-H
The Onsemi ATP304-TL-H is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for applications requiring high power dissipation, it features a built-in diode, 0.0089 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs with GULL WING terminals, this FET offers 656mJ EAS for robust performance in various electronic systems.
IRLML2060TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
SI4946BEY-T1-GE3
Vishay Siliconix
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .041 ohm;
SI7439DP-T1-E3
Vishay Intertechnology
Vishay Intertechnology's SI7439DP-T1-E3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 50A IDM, 80mJ EAS, and 0.09 ohm Drain-Source On Resistance. Operating at up to 150°C, it has a small outline package style for efficient heat dissipation.
Samsung
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 140 ns; Transistor Application: SWITCHING;
STY60NK30Z
STY60NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 240A IDM and 0.045 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor comes in a RECTANGULAR package with Matte Tin finish, offering high power dissipation of 450W.
NDS7002A_NB9GGTXA
Fairchild Semiconductor's NDS7002A_NB9GGTXA is a single N-channel power FET for switching applications. It features a 60V DS breakdown voltage, 1.5A max pulsed drain current, and 2 ohm max drain-source resistance. With Gull Wing terminals and small outline package style, it operates in an enhancement mode with a temperature range of -65 to 150°C.
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FCMT199N60
IPL60R140CFD7AUMA1
Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 2A; Terminal Finish: TIN;
IPL60R095CFD7AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 147 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 2A;
IPL60R065P7AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: S-PSSO-N4;
IPL60R199CPAUMA1
Infineon IPL60R199CPAUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 51A IDM, and 0.199 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features built-in diode, small outline package, and operates up to 175°C.
IPL60R160CFD7AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
IPL60R075CFD7AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 2A; No. of Elements: 1; Minimum DS Breakdown Voltage: 600 V;
IPL60R065C7AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: NO LEAD; Package Style (Meter): SMALL OUTLINE;
IPL60R104C7AUMA1
Infineon IPL60R104C7AUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 83A pulsed drain current, 0.104 ohm max RDS(on), and 97mJ avalanche energy rating. Suitable for ENHANCEMENT MODE operation in various electronic devices.
IPL60R285P7AUMA1
Infineon Technologies' IPL60R285P7AUMA1 is a N-CHANNEL power FET with a min DS breakdown voltage of 600V. It is designed for switching applications, offering a max pulsed drain current of 36A and an avalanche energy rating of 38mJ.
IPL60R2K1C6SATMA1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
IPL60R125C7AUMA1
Infineon IPL60R125C7AUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 66A max pulsed drain current, 78mJ avalanche energy rating, and 0.125 ohm max drain-source resistance. Operates in -40 to 150 °C temperature range with a compact square package style.
IPL60R085P7AUMA1
Infineon IPL60R085P7AUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 110A IDM, and 0.085 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features built-in diode, small outline package, and metal-oxide semiconductor technology.
IPL65R070C7AUMA1
Infineon IPL65R070C7AUMA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, 0.07 ohm RDS(ON), and 145A IDM. Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. Features include BUILT-IN DIODE, METAL-OXIDE SEMICONDUCTOR tech, and DRAIN case connection.
IPL65R230C7AUMA1
Infineon IPL65R230C7AUMA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 41A Pulsed Drain Current, 0.23 ohm On Resistance, and 48mJ Avalanche Energy Rating. Its PLASTIC/EPOXY package with NO LEAD terminals makes it suitable for surface mount configurations.
IPL60R385CPAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Avalanche Energy Rating (EAS): 227 mJ; Transistor Element Material: SILICON;
IPL60R185CFD7AUMA1
Infineon IPL60R185CFD7AUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 51A pulsed drain current, 0.185 ohm max on resistance, and 60mJ avalanche energy rating. Suitable for enhancement mode operation in various power electronics systems.
IPL60R1K5C6SATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; JESD-609 Code: e3;
IPL60R650P6SATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
IPL60R185C7AUMA1
IPL60R185C7AUMA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It has 45A IDM and 0.185 ohm max drain-source resistance. Operating in enhancement mode, it can handle up to 150°C temperature, making it suitable for high-power electronics.
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