Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Infineon IPL60R199CPAUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 51A IDM, and 0.199 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features built-in diode, small outline package, and operates up to 175°C.
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$1.450
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$2.510
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$1.058
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$1.125
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$1.390
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Corphita
$1.467
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$1.474
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$2.460
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The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, ideal for applications where weight and durability are important factors.
N-channel FETs are known for their higher electron mobility, lower on-state resistance, and faster switching speeds compared to P-channel FETs, making this transistor a good choice for high-performance applications.
The built-in diode simplifies circuit design and protects against reverse voltage spikes, making this transistor suitable for switching applications where transient voltage protection is needed.
Designed specifically for switching applications, this transistor offers fast turn-on and turn-off times, making it suitable for efficient power control and management.
Being surface mountable, this transistor is easy to install on PCBs, saving space and allowing for automated assembly processes, making it a convenient choice for mass production.
With a minimum breakdown voltage of 600V, this transistor can withstand high voltage spikes and surges, making it reliable for use in high-power applications.
The square package shape allows for efficient use of PCB space and easy arrangement in circuit layouts, making it a practical choice for compact designs.
Enhancement mode transistors are normally off until a gate voltage is applied, offering better control and efficiency in switching applications, making this transistor a reliable choice for power management.
With a high maximum pulsed drain current rating of 51A, this transistor can handle large current spikes without damage, making it suitable for applications with high transient currents.
The high avalanche energy rating of 436mJ ensures the transistor can withstand energy spikes and provide reliable protection against voltage surges, making it a robust choice for rugged environments.
The 4 terminals provide easy connectivity options and flexibility in circuit design, allowing for versatile applications and easy integration into existing systems.
The small outline package style saves space on the PCB, making it suitable for compact designs and applications where board real estate is limited.
Metal-oxide semiconductor FET technology offers high performance, fast switching speeds, and low on-state resistance, making this transistor an efficient choice for power control and amplification applications.
With a maximum operating temperature of 175°C, this transistor can withstand high-temperature environments without performance degradation, making it suitable for demanding industrial applications.
Silicon-based transistors offer high reliability, low leakage, and stable performance over a wide temperature range, making this transistor a dependable choice for long-term use in varied applications.
The tin terminal finish provides good conductivity and solderability, ensuring reliable electrical connections and easy assembly, making this transistor suitable for mass production.
With a low maximum on-resistance of 0.199 ohms, this transistor minimizes power losses and heat dissipation, making it energy-efficient and suitable for high-current applications.
Having a single terminal position simplifies circuit connections and ensures correct orientation during assembly, making it easy to integrate into existing systems and designs.
With a moisture sensitivity level of 2A, this transistor is suitable for reflow soldering processes and has a moderate level of moisture sensitivity, ensuring reliability during manufacturing and assembly.
The drain connection allows for easy and efficient heat dissipation, ensuring the transistor remains cool during operation, making it reliable for high-power applications that require effective thermal management.
Power Field Effect Transistors (FET) IPL60R199CPAUMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
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Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
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Operating Mode:
Maximum Operating Temperature:
Package Body Material:
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Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
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Transistor Application:
Transistor Element Material:
IPL60R199CPAUMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
LM317T
Analog Devices
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;
LM317AEMP/NOPB
Texas Instruments
LM317AEMP/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and a max output current of 1.5A. It operates in temperatures ranging from -40°C to 125°C, making it suitable for various applications requiring precise voltage regulation in a compact package.
261
New England Microwave
Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;
CRG0805F10K
TE Connectivity
TE Connectivity's CRG0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in various electronic circuits due to its compact size and high temperature rating.
SMBJ18CA
Lite-on Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
1N4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM7805CT/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Max): 125 Cel; Maximum Output Voltage-1: 5.25 V;
LL4148
Continental Device India
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Microchip Technology
1N4148WS
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
OPA2227UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Microsemi
BAV99
Siemens
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Shanghai Lunsure Electronic Technology
LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.
LM358N
Samsung
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
MBRA160T3G
Onsemi
MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.
2N2222A
Ksl Microdevices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
NC7WZ07P6X
The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.
IRLML6401TRPBF
Infineon Technologies
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
IRF540SPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 230 mJ; Maximum Drain-Source On Resistance: .077 ohm;
BSP315P
BSP315P by Infineon Technologies is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 4.68A and EAS of 24mJ, operating in ENHANCEMENT MODE at up to 150°C. This SMALL OUTLINE transistor has 0.8 ohm RDS(on) and DUAL terminal position for efficient power dissipation.
IRF7493TRPBF-1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
BSP316PH6327XTSA1
BSP316PH6327XTSA1 by Infineon is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for power applications. It features single configuration with built-in diode, 2.72A max pulsed drain current, and 1.8ohm max drain-source resistance. Suitable for enhancement mode operation in automotive electronics due to AEC-Q101 compliance.
FDPF10N60NZ
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;
IRLML6244TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (ID): 6.3 A; Package Shape: RECTANGULAR;
FDD4685-F085P
FDD4685-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an Avalanche Energy Rating of 121mJ.
IRF4905PBF
IRF4905PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage and 260A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in the temperature range of -55 to 175°C.
IRF7341TRPBF
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 4.7 A;
IRF7410TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;
ZXMP10A18KTC
Diodes Incorporated
ZXMP10A18KTC by Diodes Inc. is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 21.1A IDM, 0.15 ohm RDS(on), and operates in ENHANCEMENT MODE at up to 150°C. Suitable for surface mount with GULL WING terminals, it offers high performance in compact SMALL OUTLINE package style.
IRFS4010TRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Maximum Operating Temperature: 175 Cel; Package Shape: RECTANGULAR;
IRFZ44NS
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 175 Cel;
IRFR5305TRLPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; JESD-609 Code: e3; Terminal Form: GULL WING;
IRF7303TRPBF
IRF7303TRPBF by Infineon is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It has a Max Drain Current of 4.9A, Min DS Breakdown Voltage of 30V, and Max Pulsed Drain Current of 20A. This small outline package with GULL WING terminals operates in ENHANCEMENT MODE for efficient power management.
FDT434P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 6 A; No. of Terminals: 4;
SI7439DP-T1-E3
Vishay Intertechnology
Vishay Intertechnology's SI7439DP-T1-E3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 50A IDM, 80mJ EAS, and 0.09 ohm Drain-Source On Resistance. Operating at up to 150°C, it has a small outline package style for efficient heat dissipation.
IRLML9303TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
FDS8984_F085
FDS8984_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2 ELEMENTS WITH BUILT-IN DIODE, 30A Max Pulsed Drain Current, and 0.023 ohm Max Drain-Source On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
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FCMT199N60
IPL60R140CFD7AUMA1
Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 2A; Terminal Finish: TIN;
IPL60R095CFD7AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 147 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 2A;
IPL60R065P7AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: S-PSSO-N4;
IPL60R160CFD7AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
IPL60R075CFD7AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 2A; No. of Elements: 1; Minimum DS Breakdown Voltage: 600 V;
IPL60R065C7AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: NO LEAD; Package Style (Meter): SMALL OUTLINE;
IPL60R104C7AUMA1
Infineon IPL60R104C7AUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 83A pulsed drain current, 0.104 ohm max RDS(on), and 97mJ avalanche energy rating. Suitable for ENHANCEMENT MODE operation in various electronic devices.
IPL60R285P7AUMA1
Infineon Technologies' IPL60R285P7AUMA1 is a N-CHANNEL power FET with a min DS breakdown voltage of 600V. It is designed for switching applications, offering a max pulsed drain current of 36A and an avalanche energy rating of 38mJ.
IPL60R2K1C6SATMA1
IPL60R125C7AUMA1
Infineon IPL60R125C7AUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 66A max pulsed drain current, 78mJ avalanche energy rating, and 0.125 ohm max drain-source resistance. Operates in -40 to 150 °C temperature range with a compact square package style.
IPL60R085P7AUMA1
Infineon IPL60R085P7AUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 110A IDM, and 0.085 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features built-in diode, small outline package, and metal-oxide semiconductor technology.
IPL65R070C7AUMA1
Infineon IPL65R070C7AUMA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, 0.07 ohm RDS(ON), and 145A IDM. Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. Features include BUILT-IN DIODE, METAL-OXIDE SEMICONDUCTOR tech, and DRAIN case connection.
IPL65R230C7AUMA1
Infineon IPL65R230C7AUMA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 41A Pulsed Drain Current, 0.23 ohm On Resistance, and 48mJ Avalanche Energy Rating. Its PLASTIC/EPOXY package with NO LEAD terminals makes it suitable for surface mount configurations.
IPL60R385CPAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Avalanche Energy Rating (EAS): 227 mJ; Transistor Element Material: SILICON;
IPL60R185CFD7AUMA1
Infineon IPL60R185CFD7AUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 51A pulsed drain current, 0.185 ohm max on resistance, and 60mJ avalanche energy rating. Suitable for enhancement mode operation in various power electronics systems.
IPL60R1K5C6SATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; JESD-609 Code: e3;
IPL60R650P6SATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
IPL60R185C7AUMA1
IPL60R185C7AUMA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It has 45A IDM and 0.185 ohm max drain-source resistance. Operating in enhancement mode, it can handle up to 150°C temperature, making it suitable for high-power electronics.
IPL60R210P6AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; JESD-30 Code: S-PSSO-N4; Maximum Drain-Source On Resistance: .21 ohm;
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