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IKP40N65H5XKSA1

Infineon Technologies

IKP40N65H5XKSA1 by Infineon Technologies

IKP40N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a nominal turn-off time of 217ns and a max power dissipation of 250W.

Median Price

$1.890

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$1.192

100+ parts

$1.085

1k+ parts

$0.977

10k+ parts

-

50

$1.192

$1.085

$0.977

-

Chip1Stop

Japan . 474 parts In-Stock

1+ parts

$1.890

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-

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474

$1.890

-

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Arrow

USA . 3,848 parts In-Stock

1+ parts

$2.025

100+ parts

$1.804

1k+ parts

$1.591

10k+ parts

$1.591

3,848

$2.025

$1.804

$1.591

$1.591

Newark

USA . 360 parts In-Stock

1+ parts

$3.660

100+ parts

$2.290

1k+ parts

$1.680

10k+ parts

-

360

$3.660

$2.290

$1.680

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RS (Exports)

UK . 1,475 parts In-Stock

1+ parts

-

100+ parts

$2.338

1k+ parts

$2.242

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-

1,475

-

$2.338

$2.242

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Verical

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.727

10k+ parts

$1.583

500

-

-

$1.727

$1.583

Avnet

USA . 250 parts In-Stock

1+ parts

-

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-

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250

-

-

-

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Rochester

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$1.240

1k+ parts

$1.110

10k+ parts

$1.050

50

-

$1.240

$1.110

$1.050

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 613 parts In-Stock

1+ parts

$1.132

100+ parts

-

1k+ parts

-

10k+ parts

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613

$1.132

-

-

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$2.701

100+ parts

-

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-

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870

$2.701

-

-

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Schukat

Germany . 305 parts In-Stock

1+ parts

$3.670

100+ parts

$2.100

1k+ parts

-

10k+ parts

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305

$3.670

$2.100

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Bristol Electronics

USA . 1,978 parts In-Stock

1+ parts

-

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1,978

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Vyrian

USA . 1,279 parts In-Stock

1+ parts

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1,279

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ComSIT Distribution GmbH

Germany . 89 parts In-Stock

1+ parts

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89

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IBS Electronics

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.539

10k+ parts

$2.496

50

-

-

$2.539

$2.496

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 277 parts In-Stock

1+ parts

$0.724

100+ parts

-

1k+ parts

-

10k+ parts

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277

$0.724

-

-

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Ampacity Inc.

Singapore . 1,353 parts In-Stock

1+ parts

$1.010

100+ parts

-

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-

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1,353

$1.010

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Corphita

USA . 556 parts In-Stock

1+ parts

$1.073

100+ parts

-

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556

$1.073

-

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.192

100+ parts

$1.085

1k+ parts

$0.977

10k+ parts

-

50

$1.192

$1.085

$0.977

-

Corohmni

South Africa . 348 parts In-Stock

1+ parts

$1.281

100+ parts

-

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348

$1.281

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Modulus Dynamics

Lithuania . 17,163 parts In-Stock

1+ parts

$1.939

100+ parts

$1.861

1k+ parts

$1.784

10k+ parts

-

17,163

$1.939

$1.861

$1.784

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Argo Parts USA

USA . 4,056 parts In-Stock

1+ parts

$2.701

100+ parts

-

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-

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4,056

$2.701

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Netroflash

USA . 100 parts In-Stock

1+ parts

$2.701

100+ parts

-

1k+ parts

$2.566

10k+ parts

$2.512

100

$2.701

-

$2.566

$2.512

Continental Prestige Electronics

USA . 984 parts In-Stock

1+ parts

$3.810

100+ parts

$2.510

1k+ parts

$1.800

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984

$3.810

$2.510

$1.800

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Andel Nordic

Denmark . 1,000 parts In-Stock

1+ parts

$23.040

100+ parts

-

1k+ parts

$16.126

10k+ parts

$16.126

1,000

$23.040

-

$16.126

$16.126

Microchip USA

USA . 2,011 parts In-Stock

1+ parts

$30.030

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2,011

$30.030

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QUARKTWIN TECHNOLOGY LTD

USA . 16,854 parts In-Stock

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16,854

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Perfect Parts

USA . 554 parts In-Stock

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554

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iodParts Technologies Inc.

India . 345 parts In-Stock

1+ parts

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345

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Overview

Unlock the power of advanced technology with the IKP40N65H5XKSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that offer unparalleled performance in power control applications. With a maximum VCEsat of 2.1V and a maximum operating temperature of 175°C, this N-CHANNEL transistor provides reliable and efficient operation. Whether you're looking to enhance your power electronics or optimize your industrial systems, the IKP40N65H5XKSA1 offers the value, benefits, and advantages that customers need to succeed. Experience innovation at its finest with Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the IGBT, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state resistance, making them more efficient for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse current flow.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimized performance in such scenarios.

Maximum VCEsat: 2.1 V

Low VCEsat helps in reducing power losses and increasing efficiency of the IGBT in power control applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into different types of circuits and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during installation.

Nominal Turn Off Time (toff): 217 ns

Fast turn-off time ensures quick switching speed and efficient power control.

No. of Terminals: 3

Simple three-terminal design for easy connectivity and control in power applications.

Maximum Power Dissipation (Abs): 250 W

High power dissipation capability allows for handling large power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides mechanical stability and ease of mounting in power control systems.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 650 V

High voltage rating makes it suitable for handling high power levels in power control applications.

Transistor Element Material: SILICON

Silicon material ensures high stability and efficiency of the IGBT in power control scenarios.

Maximum Gate-Emitter Voltage: 20 V

Safe operating voltage for gate control signals, preventing damage to the IGBT during operation.

Minimum Operating Temperature: -40 °C

Low operating temperature ensures reliable performance even in extreme cold conditions.

Maximum Collector Current (IC): 74 A

High collector current rating enables the IGBT to handle large current flows in power applications.

Maximum Gate-Emitter Threshold Voltage: 4.8 V

Low gate-emitter threshold voltage ensures easy and efficient control of the IGBT.

Terminal Finish: TIN

Tin finish provides good conductivity and solderability for the terminals of the IGBT.

Terminal Position: SINGLE

Single terminal position simplifies the connection and control of the IGBT in power circuits.

Case Connection: COLLECTOR

Case connection at the collector ensures efficient heat dissipation and electrical connectivity.

Nominal Turn On Time (ton): 32 ns

Fast turn-on time allows for quick response and control in power switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKP40N65H5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

4.8 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

217 ns

Nominal Turn On Time (ton):

32 ns

Maximum VCEsat:

2.1 V

Trade Compliance

IKP40N65H5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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