Loading...

FZ900R12KE4

Infineon Technologies

FZ900R12KE4 by Infineon Technologies

FZ900R12KE4 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 900A. It is designed for power control applications, featuring a nominal toff of 810ns and a package style of FLANGE MOUNT.

Median Price

$171.550

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 13 parts In-Stock

1+ parts

$171.550

100+ parts

-

1k+ parts

-

10k+ parts

-

13

$171.550

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 11 parts In-Stock

1+ parts

$123.190

100+ parts

-

1k+ parts

-

10k+ parts

-

11

$123.190

-

-

-

Digiode

USA . 711 parts In-Stock

1+ parts

$141.370

100+ parts

-

1k+ parts

-

10k+ parts

-

711

$141.370

-

-

-

Forefront Electronics and Design

USA . 4 parts In-Stock

1+ parts

$183.750

100+ parts

-

1k+ parts

-

10k+ parts

-

4

$183.750

-

-

-

Rutronik

Germany . 170 parts In-Stock

1+ parts

-

100+ parts

$136.110

1k+ parts

-

10k+ parts

-

170

-

$136.110

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 15,674 parts In-Stock

1+ parts

$1.185

100+ parts

$1.138

1k+ parts

$1.090

10k+ parts

-

15,674

$1.185

$1.138

$1.090

-

Andel Nordic

Denmark . 500 parts In-Stock

1+ parts

$33.700

100+ parts

-

1k+ parts

$23.592

10k+ parts

$23.592

500

$33.700

-

$23.592

$23.592

Corphita

USA . 88 parts In-Stock

1+ parts

$133.929

100+ parts

-

1k+ parts

-

10k+ parts

-

88

$133.929

-

-

-

A-Z Elektronik GmbH

Germany . 7,334 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,334

-

-

-

-

Alle Elektronik GmbH

Germany . 4,889 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,889

-

-

-

-

Northwest PG Solutions

USA . 2,327 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,327

-

-

-

-

Perfect Parts

USA . 1,295 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,295

-

-

-

-

Native Components

USA . 402 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

402

-

-

-

-

Overview

Unleash the power of the FZ900R12KE4 by Infineon Technologies, a top-of-the-line Insulated Gate Bipolar Transistor designed for maximum performance in power control applications. With its single configuration and built-in diode, this transistor offers unparalleled efficiency and reliability. Infineon Technologies is known for delivering high-quality products, making this IGBT a top choice for customers seeking superior technology. Whether you're looking to optimize your power systems or enhance your industrial processes, the FZ900R12KE4 provides the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in providing a low-loss path for the freewheeling current in inductive loads, increasing the efficiency of power control circuits.

Maximum VCEsat: 2.1 V

A low VCEsat value indicates minimal voltage drop across the transistor when conducting, resulting in lower power dissipation and higher efficiency.

Maximum Power Dissipation (Abs): 4300 W

The high power dissipation capability of this IGBT allows it to handle large amounts of power, making it suitable for high power applications.

Maximum Collector-Emitter Voltage: 1200 V

The high voltage rating ensures that the IGBT can operate safely in high voltage applications without breakdown.

Maximum Collector Current (IC): 900 A

With a high collector current rating, this IGBT can handle large currents, making it suitable for power control applications with high current requirements.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FZ900R12KE4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X5

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

810 ns

Nominal Turn On Time (ton):

370 ns

Maximum VCEsat:

2.1 V

Trade Compliance

FZ900R12KE4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 3