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CY15V104QSN-108SXI

Infineon Technologies

CY15V104QSN-108SXI by Infineon Technologies

Infineon's CY15V104QSN-108SXI FRAM offers 512Kx8 organization, operates at 108MHz clock frequency, and has a memory density of 4194304 bit. Ideal for applications requiring high endurance, such as IoT devices or industrial automation systems.

Median Price

$25.788

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 818 parts In-Stock

1+ parts

$18.910

100+ parts

$16.184

1k+ parts

$15.149

10k+ parts

-

818

$18.910

$16.184

$15.149

-

Mouser Electronics

USA . 580 parts In-Stock

1+ parts

$18.910

100+ parts

$15.780

1k+ parts

$15.140

10k+ parts

-

580

$18.910

$15.780

$15.140

-

Newark

USA . 10 parts In-Stock

1+ parts

$19.480

100+ parts

$16.250

1k+ parts

$16.020

10k+ parts

-

10

$19.480

$16.250

$16.020

-

Chip1Stop

Japan . 460 parts In-Stock

1+ parts

$26.600

100+ parts

$19.100

1k+ parts

$17.600

10k+ parts

-

460

$26.600

$19.100

$17.600

-

Arrow

USA . 404 parts In-Stock

1+ parts

$28.258

100+ parts

$22.796

1k+ parts

$21.714

10k+ parts

-

404

$28.258

$22.796

$21.714

-

Farnell

UK . 466 parts In-Stock

1+ parts

$28.470

100+ parts

$17.080

1k+ parts

-

10k+ parts

-

466

$28.470

$17.080

-

-

Element14

Singapore . 50 parts In-Stock

1+ parts

$28.653

100+ parts

$22.914

1k+ parts

-

10k+ parts

-

50

$28.653

$22.914

-

-

Flip Electronics (Authorized)

USA . 12,535 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,535

-

-

-

-

Rochester

USA . 1,267 parts In-Stock

1+ parts

-

100+ parts

$19.030

1k+ parts

$17.030

10k+ parts

$16.020

1,267

-

$19.030

$17.030

$16.020

Verical

USA . 1,081 parts In-Stock

1+ parts

-

100+ parts

$24.975

1k+ parts

-

10k+ parts

-

1,081

-

$24.975

-

-

RS (Exports)

UK . 470 parts In-Stock

1+ parts

-

100+ parts

$32.759

1k+ parts

$30.916

10k+ parts

-

470

-

$32.759

$30.916

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 156 parts In-Stock

1+ parts

$17.290

100+ parts

-

1k+ parts

-

10k+ parts

-

156

$17.290

-

-

-

Vyrian

USA . 271 parts In-Stock

1+ parts

$18.200

100+ parts

-

1k+ parts

-

10k+ parts

-

271

$18.200

-

-

-

Flip Electronics

USA . 8,775 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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8,775

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 835 parts In-Stock

1+ parts

$0.030

100+ parts

-

1k+ parts

-

10k+ parts

$0.029

835

$0.030

-

-

$0.029

Corphita

USA . 958 parts In-Stock

1+ parts

$16.380

100+ parts

-

1k+ parts

-

10k+ parts

-

958

$16.380

-

-

-

Northwest PG Solutions

USA . 833 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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833

-

-

-

-

Overview

Discover the cutting-edge CY15V104QSN-108SXI from Infineon Technologies, a leading manufacturer known for top-quality products. This FRAM memory device offers unparalleled reliability and endurance with 100 quadrillion write/erase cycles. Ideal for applications requiring high-speed data transfer, this synchronous operation memory boasts a clock frequency of 108 MHz. With its small outline package and versatile serial bus interface, the CY15V104QSN-108SXI is a must-have for customers seeking advanced memory solutions that deliver superior performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the FRAM, ensuring reliable performance over time.

Operating Mode: SYNCHRONOUS

Allows for synchronized operation with other components in the system, enhancing efficiency and speed.

Nominal Supply Voltage: 1.8V

Low power consumption at a nominal voltage, making the FRAM energy-efficient.

Organization: 512KX8

Offers a large memory capacity with efficient organization, suitable for storing and accessing data effectively.

Write Protection: HARDWARE/SOFTWARE

Provides security features to prevent unauthorized data writes, ensuring data integrity and reliability.

Maximum Clock Frequency (fCLK): 108 MHz

Supports high-speed data transfer and processing, making the FRAM ideal for applications requiring fast performance.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, enhancing overall performance and reliability.

Endurance: 100000000000000 Write/Erase Cycles

Offers a high endurance level, allowing for frequent read/write operations without degradation of the memory.

Technical Specifications

FRAMs CY15V104QSN-108SXI attributes and parameters. Explore more FRAMs devices from Infineon Technologies

Specs

Additional Features:

2kv ESD available

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

10

Endurance:

100000000000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

5.28 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.03 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000209 Amp

Minimum Standby Voltage:

1.71 V

Maximum Supply Current:

21 mA

Maximum Supply Voltage (Vsup):

1.89 V

Minimum Supply Voltage (Vsup):

1.71 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

PURE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5.23 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CY15V104QSN-108SXI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.B.2

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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