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IRFP462

Harris Semiconductor

IRFP462 by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Qualification: Not Qualified; Maximum Drain Current (Abs) (ID): 17 A;

Median Price

$4.020

Lifecycle Status

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< 1k

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Rochester

USA . 152 parts In-Stock

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$3.680

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$3.290

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$3.100

152

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DigiKey

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$4.020

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Verical

USA . 150 parts In-Stock

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$4.600

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$4.112

10k+ parts

$3.875

150

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$3.875

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Microchip USA

USA . 6,928 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Supply Digital

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Perfect Parts

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Technical Specifications

Power Field Effect Transistors (FET) IRFP462 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Harris Semiconductor

Specs

Avalanche Energy Rating (EAS):

960 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

17 A

Maximum Drain Current (ID):

17 A

Maximum Drain-Source On Resistance:

.35 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

250 W

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

68 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

228 ns

Maximum Turn On Time (ton):

155 ns

Trade Compliance

IRFP462 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

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