Loading...

JANTX2N493A

Gpd Optoelectronics

JANTX2N493A by Gpd Optoelectronics

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; No. of Terminals: 3; No. of Elements: 1;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Unijunction Transistors (UFT) JANTX2N493A attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Gpd Optoelectronics

Specs

Case Connection:

ISOLATED

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.62

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

12 mA

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

MIL-19500/75B

Maximum Static Inter-Base Resistance:

6.8 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

JANTX2N493A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-410-8886, 5961004108886

NIIN

004108886

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.