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7MBR50VR120-50

Fuji Electric

7MBR50VR120-50 by Fuji Electric

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 50 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

Median Price

$130.017

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 91 parts In-Stock

1+ parts

$130.017

100+ parts

-

1k+ parts

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10k+ parts

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91

$130.017

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Perfect Parts

USA . 110 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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110

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) 7MBR50VR120-50 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fuji Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X21

No. of Elements:

7

No. of Terminals:

21

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

530 ns

Nominal Turn On Time (ton):

390 ns

Maximum VCEsat:

2.6 V

Trade Compliance

7MBR50VR120-50 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fuji Electric

Fuji Electric has been supporting industrial and social infrastructure by extensively developing power semiconductor and power electronics solutions as core technologies. In addition, we are now working to realize a responsible and sustainable society through our energy and environment business by offering renewable energy solutions, as well as power stabilization, energy saving, and automation solutions, in order to help achieve the worldwide goal of a decarbonized society. Fuji Electric’s strength is its ability to independently develop and manufacture power semiconductors as key energy-saving devices. We utilize these devices in our power electronics equipment and offer customers comprehensive engineering services that integrate these products. By leveraging our strengths, we are contributing to the realization of the worldwide goal of a decarbonized society.

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