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MRF20030R

Freescale Semiconductor

MRF20030R by Freescale Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Terminal Form: FLAT; Transistor Element Material: SILICON;

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One Stop Electronics

USA . 2,169 parts In-Stock

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Corphita

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF20030R attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Freescale Semiconductor

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF20030R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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