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AFV121KGSR5

Freescale Semiconductor

AFV121KGSR5 by Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 2.5 pF;

Median Price

$591.630

Lifecycle Status

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RFMW

USA . 14 parts In-Stock

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Vyrian

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USA . 569 parts In-Stock

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$0.386

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Northwest PG Solutions

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$0.390

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One Stop Electronics

USA . 14 parts In-Stock

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$502.890

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Ampacity Inc.

Singapore . 14 parts In-Stock

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Corphita

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Microchip USA

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Technical Specifications

RF Power Field Effect Transistors (FET) AFV121KGSR5 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

112 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-G4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Minimum Power Gain (Gp):

18.5 dB

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

AFV121KGSR5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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