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FT150R12KE3_B4

Eupec & Kg

FT150R12KE3_B4 by Eupec & Kg

N-CHANNEL; Configuration: COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Case Connection: ISOLATED; Nominal Turn On Time (ton): 350 ns;

Median Price

-

Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 714 parts In-Stock

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714

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Digiode

USA . 503 parts In-Stock

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503

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 13,693 parts In-Stock

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$0.518

100+ parts

$0.497

1k+ parts

$0.477

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13,693

$0.518

$0.497

$0.477

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Native Components

USA . 560 parts In-Stock

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$0.855

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560

$0.855

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Northwest PG Solutions

USA . 381 parts In-Stock

1+ parts

$0.941

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381

$0.941

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Corphita

USA . 268 parts In-Stock

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268

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FT150R12KE3_B4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-XUFM-X39

No. of Elements:

3

No. of Terminals:

39

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

850 ns

Nominal Turn On Time (ton):

350 ns

Trade Compliance

FT150R12KE3_B4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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