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BSM50GD120DLCE3226

Eupec & Kg

BSM50GD120DLCE3226 by Eupec & Kg

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 85 A; No. of Elements: 6;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 569 parts In-Stock

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569

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Digiode

USA . 258 parts In-Stock

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258

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Modulus Dynamics

Lithuania . 14,458 parts In-Stock

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$1.404

100+ parts

$1.348

1k+ parts

$1.292

10k+ parts

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14,458

$1.404

$1.348

$1.292

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Native Components

USA . 947 parts In-Stock

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Corphita

USA . 808 parts In-Stock

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808

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Northwest PG Solutions

USA . 567 parts In-Stock

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567

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM50GD120DLCE3226 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X17

No. of Elements:

6

No. of Terminals:

17

Maximum Operating Temperature:

125 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

300 ns

Nominal Turn On Time (ton):

60 ns

Maximum VCEsat:

2.6 V

Trade Compliance

BSM50GD120DLCE3226 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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