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BSM300GA170DN2E3166

Eupec & Kg

BSM300GA170DN2E3166 by Eupec & Kg

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 300 A; No. of Elements: 1;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 917 parts In-Stock

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917

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Vyrian

USA . 417 parts In-Stock

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417

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 298 parts In-Stock

1+ parts

$0.913

100+ parts

$0.876

1k+ parts

$0.840

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298

$0.913

$0.876

$0.840

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Northwest PG Solutions

USA . 1,004 parts In-Stock

1+ parts

$3.454

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1,004

$3.454

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Corphita

USA . 261 parts In-Stock

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261

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Native Components

USA . 134 parts In-Stock

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$3.046

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134

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$3.046

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM300GA170DN2E3166 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X5

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

GENERAL PURPOSE SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

3.9 V

Trade Compliance

BSM300GA170DN2E3166 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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