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BSM150GAL120DN2

Eupec & Kg

BSM150GAL120DN2 by Eupec & Kg

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 150 A; Transistor Application: POWER CONTROL;

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2

In-Stock Inventory

< 1k

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Digiode

USA . 886 parts In-Stock

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886

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Vyrian

USA . 60 parts In-Stock

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60

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.174

100+ parts

$1.068

1k+ parts

$0.963

10k+ parts

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100

$1.174

$1.068

$0.963

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Modulus Dynamics

Lithuania . 5,666 parts In-Stock

1+ parts

$1.494

100+ parts

$1.434

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$1.374

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5,666

$1.494

$1.434

$1.374

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Andel Nordic

Denmark . 864 parts In-Stock

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$48.090

100+ parts

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$33.664

10k+ parts

$33.664

864

$48.090

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$33.664

$33.664

Northwest PG Solutions

USA . 1,140 parts In-Stock

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$3.422

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1,140

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$3.422

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Corphita

USA . 973 parts In-Stock

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973

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Native Components

USA . 142 parts In-Stock

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$3.387

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142

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$3.387

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM150GAL120DN2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X5

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

670 ns

Nominal Turn On Time (ton):

300 ns

Maximum VCEsat:

3.2 V

Trade Compliance

BSM150GAL120DN2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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