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ZXTP19100CFFTA

Diodes Incorporated

ZXTP19100CFFTA by Diodes Incorporated

ZXTP19100CFFTA by Diodes Inc. is a PNP BJT transistor with 100V VCEO, 2A IC, and 2W power dissipation. Ideal for switching applications, it has a min hFE of 20 and operates up to 150°C. This surface-mount device in a small outline package suits high-frequency designs needing compact components.

Median Price

$0.684

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 27,971 parts In-Stock

1+ parts

$1.110

100+ parts

$0.455

1k+ parts

$0.319

10k+ parts

$0.276

27,971

$1.110

$0.455

$0.319

$0.276

DigiKey

USA . 35,379 parts In-Stock

1+ parts

$1.170

100+ parts

$0.482

1k+ parts

$0.338

10k+ parts

$0.259

35,379

$1.170

$0.482

$0.338

$0.259

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.259

9,000

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-

-

$0.259

Arrow

USA . 214 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.252

10k+ parts

-

214

-

-

$0.252

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 3,946 parts In-Stock

1+ parts

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3,946

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

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$0.401

3,000

-

-

-

$0.401

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

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500

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Speed Components Ltd

Israel . 80 parts In-Stock

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80

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 65,243 parts In-Stock

1+ parts

$0.570

100+ parts

$0.370

1k+ parts

$0.230

10k+ parts

$0.230

65,243

$0.570

$0.370

$0.230

$0.230

Corohmni

South Africa . 437 parts In-Stock

1+ parts

$0.630

100+ parts

-

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437

$0.630

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Kepictronics

USA . 39,000 parts In-Stock

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39,000

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QUARKTWIN TECHNOLOGY LTD

USA . 27,494 parts In-Stock

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27,494

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Perfect Parts

USA . 5,358 parts In-Stock

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5,358

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Continental Prestige Electronics

USA . 1,162 parts In-Stock

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1,162

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Argo Parts USA

USA . 595 parts In-Stock

1+ parts

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595

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Overview

Unlock the power of high-quality and reliable electronics with the ZXTP19100CFFTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch Small Signal Bipolar Junction Transistors (BJT) like this PNP transistor designed for switching applications. With a maximum collector-emitter voltage of 100V and a maximum operating temperature of 150°C, this transistor offers unmatched performance and durability. Whether you're working on consumer electronics, automotive systems, or industrial equipment, the ZXTP19100CFFTA provides exceptional value and efficiency for all your project needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for versatility in circuit design and compatibility with other components.

Configuration: SINGLE

Single configuration simplifies circuit layout and reduces complexity in design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in high-speed operations.

Surface Mount: YES

Surface mount capability enables easy and efficient installation on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy placement and soldering on PCBs.

Terminal Form: FLAT

Flat terminals provide stable connections and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 2 W

High power dissipation rating allows for reliable operation in demanding environments.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and ensures efficient heat dissipation.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures consistent and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures stable performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating of 100V allows for reliable operation in various voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor element.

Maximum Collector Current (IC): 2 A

High collector current rating of 2A allows for handling of high current loads in the circuit.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and durability for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient soldering and reflow processes during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C ensures reliable soldering and assembly integrity.

Nominal Transition Frequency (fT): 142 MHz

High nominal transition frequency of 142 MHz allows for fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTP19100CFFTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTP19100CFFTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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