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ZXTP25100CFHTA

Diodes Incorporated

ZXTP25100CFHTA by Diodes Incorporated

ZXTP25100CFHTA by Diodes Inc. is a PNP small signal BJT transistor with a max collector-emitter voltage of 100V and a max collector current of 1A. It is commonly used for switching applications due to its high power dissipation of 1.81W and low min DC current gain (hFE) of 20.

Median Price

$0.642

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,404 parts In-Stock

1+ parts

$0.820

100+ parts

$0.362

1k+ parts

$0.255

10k+ parts

-

3,404

$0.820

$0.362

$0.255

-

DigiKey

USA . 10,745 parts In-Stock

1+ parts

$0.950

100+ parts

$0.387

1k+ parts

$0.269

10k+ parts

$0.204

10,745

$0.950

$0.387

$0.269

$0.204

Mouser Electronics

USA . 7,332 parts In-Stock

1+ parts

$0.950

100+ parts

$0.385

1k+ parts

$0.268

10k+ parts

$0.187

7,332

$0.950

$0.385

$0.268

$0.187

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$1.580

100+ parts

$1.438

1k+ parts

$1.296

10k+ parts

-

100

$1.580

$1.438

$1.296

-

Verical

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.200

27,000

-

-

-

$0.200

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

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$0.187

3,000

-

-

-

$0.187

Farnell

UK . 2,330 parts In-Stock

1+ parts

-

100+ parts

$0.273

1k+ parts

$0.217

10k+ parts

$0.206

2,330

-

$0.273

$0.217

$0.206

Element14

Singapore . 2,330 parts In-Stock

1+ parts

-

100+ parts

$0.464

1k+ parts

$0.405

10k+ parts

-

2,330

-

$0.464

$0.405

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

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150

$0.254

-

-

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Chip Stock

USA . 9,400 parts In-Stock

1+ parts

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9,400

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Vyrian

USA . 6,652 parts In-Stock

1+ parts

-

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6,652

-

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.328

3,000

-

-

-

$0.328

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,104 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,104

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Speed Components Ltd

Israel . 17 parts In-Stock

1+ parts

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17

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 6,682 parts In-Stock

1+ parts

$0.159

100+ parts

$0.155

1k+ parts

$0.154

10k+ parts

-

6,682

$0.159

$0.155

$0.154

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Continental Prestige Electronics

USA . 1,684 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

10k+ parts

$0.249

1,684

$0.254

-

-

$0.249

Argo Parts USA

USA . 773 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

10k+ parts

$0.247

773

$0.254

-

-

$0.247

Corohmni

South Africa . 240 parts In-Stock

1+ parts

$0.288

100+ parts

-

1k+ parts

-

10k+ parts

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240

$0.288

-

-

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Aztec Data Supply Inc.

USA . 1,676 parts In-Stock

1+ parts

$1.049

100+ parts

-

1k+ parts

-

10k+ parts

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1,676

$1.049

-

-

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.580

100+ parts

$1.438

1k+ parts

$1.296

10k+ parts

-

100

$1.580

$1.438

$1.296

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QUARKTWIN TECHNOLOGY LTD

USA . 22,680 parts In-Stock

1+ parts

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22,680

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Perfect Parts

USA . 16,256 parts In-Stock

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16,256

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Metaverse IC Inc.

Canada . 15,000 parts In-Stock

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15,000

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Lixinc

USA . 11,577 parts In-Stock

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11,577

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iodParts Technologies Inc.

India . 7,693 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.430

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7,693

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$0.430

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Assy Fe

Spain . 2,994 parts In-Stock

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2,994

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S.R.D Solutions

India . 2,500 parts In-Stock

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2,500

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,000

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.249

1k+ parts

$0.241

10k+ parts

$0.236

100

-

$0.249

$0.241

$0.236

Overview

Discover the power of the ZXTP25100CFHTA by Diodes Incorporated, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With its PNP polarity and single configuration, this surface-mount transistor offers incredible value and benefits to customers. Manufactured by Diodes Incorporated, a trusted industry leader, this product guarantees reliability and performance. Whether you need to switch circuits or control power, the ZXTP25100CFHTA is the perfect choice. Its maximum operating temperature of 150°C, maximum collector-emitter voltage of 100V, and maximum collector current of 1A make it suitable for a wide range of applications. Trust Diodes Incorporated to deliver exceptional products that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This small signal BJT is made of durable plastic/epoxy material, ensuring its longevity and reliability in various applications.

Polarity or Channel Type: PNP

Being a PNP transistor, this product is suitable for applications where positive voltage is applied to the emitter terminal, making it ideal for switching purposes.

Configuration: SINGLE

The single configuration of this BJT simplifies its usage and installation, making it convenient for various circuit designs.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor offers fast and efficient switching capabilities, making it perfect for electronic systems requiring high-speed switching.

Surface Mount: YES

With surface mount capability, this BJT can be easily and securely mounted onto the surface of a PCB, reducing assembly time and making it suitable for small devices with limited space.

Package Shape: RECTANGULAR

The rectangular package shape of this transistor allows for easy integration and placement on a circuit board, optimizing space utilization.

Terminal Form: GULL WING

The gull wing terminal form provides a robust connection and facilitates easy soldering, ensuring reliable electrical connections and enhancing the overall performance of the transistor.

No. of Elements: 1

This BJT consists of a single element, simplifying circuit designs and minimizing complexity.

No. of Terminals: 3

With three terminals, this BJT offers easy and flexible connectivity options, enabling seamless integration into various circuit configurations.

Maximum Power Dissipation (Abs): 1.81 W

With a maximum power dissipation of 1.81 W, this BJT can handle high-power applications without compromising its performance and reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style ensures that this BJT occupies minimal space on a circuit board, making it suitable for compact devices and designs.

Minimum DC Current Gain (hFE): 20

The minimum DC current gain of 20 ensures reliable amplification and signal control capabilities in low-power circuits, providing a stable and predictable performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this BJT can withstand high-temperature environments and maintain its performance under challenging operating conditions.

Maximum Collector-Emitter Voltage: 100 V

The maximum collector-emitter voltage of 100 V makes this BJT suitable for applications requiring higher voltage handling capabilities, ensuring reliable and efficient operations.

Transistor Element Material: SILICON

Constructed with silicon, this BJT offers excellent electrical properties, including high conductivity and thermal stability, enhancing its overall performance and durability.

Minimum Operating Temperature: -55 °C

Capable of operating in temperatures as low as -55°C, this BJT is well-suited for applications in extreme temperature environments, making it reliable and versatile.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this BJT can handle higher current loads, making it suitable for applications requiring increased power output.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides reliable solderability, ensuring secure connections and preventing corrosion, thereby increasing the lifespan and performance of the BJT.

Terminal Position: DUAL

With dual terminal positions, this BJT offers flexibility in circuit design and allows for easy connectivity, enhancing ease of use and overall functionality.

Moisture Sensitivity Level (MSL): 1

Featuring an MSL level of 1, this BJT can be stored and shipped without additional precautions, ensuring easy handling and reducing the risk of moisture-related damage.

Maximum Time At Peak Reflow Temperature (s): 30

This BJT can withstand a maximum time of 30 seconds at peak reflow temperature, providing ease of soldering during assembly processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable solder connections, allowing for efficient production and reducing the risk of solder joint defects.

Nominal Transition Frequency (fT): 180 MHz

With a nominal transition frequency of 180 MHz, this BJT delivers excellent high-frequency performance, making it suitable for applications requiring fast signal response and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTP25100CFHTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTP25100CFHTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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