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ZXTP2027FTA

Diodes Incorporated

ZXTP2027FTA by Diodes Incorporated

ZXTP2027FTA by Diodes Inc. is a PNP BJT transistor with 60V VCEO, 4A IC, and 165MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.752

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 42,692 parts In-Stock

1+ parts

$1.210

100+ parts

$0.335

1k+ parts

$0.273

10k+ parts

$0.272

42,692

$1.210

$0.335

$0.273

$0.272

DigiKey

USA . 6,750 parts In-Stock

1+ parts

$1.210

100+ parts

$0.501

1k+ parts

$0.353

10k+ parts

$0.273

6,750

$1.210

$0.501

$0.353

$0.273

Verical

USA . 57,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.294

57,000

-

-

-

$0.294

Arrow

USA . 4,175 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.272

10k+ parts

$0.269

4,175

-

-

$0.272

$0.269

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 71 parts In-Stock

1+ parts

$0.357

100+ parts

-

1k+ parts

-

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71

$0.357

-

-

-

Vyrian

USA . 42,007 parts In-Stock

1+ parts

-

100+ parts

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42,007

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-

-

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ACDS - Activité Composants Distribution Service

France . 1,026 parts In-Stock

1+ parts

-

100+ parts

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1,026

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-

-

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Velocity Electronics

USA . 167 parts In-Stock

1+ parts

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167

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Semtec, LLC

USA . 14 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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14

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 51,390 parts In-Stock

1+ parts

$0.224

100+ parts

$0.218

1k+ parts

$0.217

10k+ parts

-

51,390

$0.224

$0.218

$0.217

-

Continental Prestige Electronics

USA . 6,549 parts In-Stock

1+ parts

$0.357

100+ parts

-

1k+ parts

-

10k+ parts

$0.349

6,549

$0.357

-

-

$0.349

Argo Parts USA

USA . 1,592 parts In-Stock

1+ parts

$0.357

100+ parts

-

1k+ parts

-

10k+ parts

$0.346

1,592

$0.357

-

-

$0.346

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.357

100+ parts

$0.349

1k+ parts

-

10k+ parts

-

500

$0.357

$0.349

-

-

Component Stockers USA

USA . 93,535 parts In-Stock

1+ parts

$0.730

100+ parts

$0.440

1k+ parts

$0.310

10k+ parts

$0.260

93,535

$0.730

$0.440

$0.310

$0.260

Aztec Data Supply Inc.

USA . 2,745 parts In-Stock

1+ parts

$0.869

100+ parts

-

1k+ parts

-

10k+ parts

-

2,745

$0.869

-

-

-

Corohmni

South Africa . 275 parts In-Stock

1+ parts

$0.906

100+ parts

-

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10k+ parts

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275

$0.906

-

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Perfect Parts

USA . 43,761 parts In-Stock

1+ parts

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43,761

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Lixinc

USA . 3,570 parts In-Stock

1+ parts

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3,570

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Kepictronics

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,000

-

-

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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3,000

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-

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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-

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S.R.D Solutions

India . 2,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,500

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-

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Cyclops Electronics Ltd (Excess)

UK . 1,026 parts In-Stock

1+ parts

-

100+ parts

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1,026

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Overview

Enhance your electronic design projects with the ZXTP2027FTA from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their products. The ZXTP2027FTA is a PNP Small Signal Bipolar Junction Transistor designed for switching applications, offering a maximum collector-emitter voltage of 60V and a maximum collector current of 4A. With its compact rectangular package and gull wing terminals, this transistor is ideal for surface mount applications. Trust in Diodes Incorporated to deliver high-performance solutions for your circuit needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and heat-resistant material, ensuring longevity and reliability of the transistor.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: SINGLE

Simplified circuit design with a single transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Surface Mount: YES

Easy to mount and replace on circuit boards.

Package Shape: RECTANGULAR

Space-saving design for compact applications.

Terminal Form: GULL WING

Facilitates easy soldering and connection to the circuit board.

No. of Terminals: 3

Simplified connection setup with only 3 terminals.

Maximum Power Dissipation (Abs): 1.56 W

Handles high power dissipation, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained designs.

Minimum DC Current Gain (hFE): 20

Consistent and reliable amplification of current.

Maximum Operating Temperature: 150 °C

Operates efficiently at high temperatures, suitable for industrial environments.

Maximum Collector-Emitter Voltage: 60 V

Handles high voltage levels, ensuring robust performance.

Transistor Element Material: SILICON

High-quality semiconductor material for reliable performance.

Maximum Collector Current (IC): 4 A

Handles high current levels, suitable for diverse applications.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-lasting performance.

Terminal Position: DUAL

Facilitates easy connection setup in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering process effectively.

Peak Reflow Temperature °C: 260

Handles high-temperature soldering processes.

Nominal Transition Frequency (fT): 165 MHz

Offers high-frequency response for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTP2027FTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTP2027FTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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