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ZXTP05120HFFTA

Diodes Incorporated

ZXTP05120HFFTA by Diodes Incorporated

ZXTP05120HFFTA by Diodes Inc. is a PNP Darlington BJT with 2W power dissipation, hFE of 2000, and VCE of 120V. Ideal for applications requiring high current gain and voltage switching in small outline packages.

Median Price

$0.521

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 10 parts In-Stock

1+ parts

$0.168

100+ parts

-

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10

$0.168

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Mouser Electronics

USA . 11,436 parts In-Stock

1+ parts

$0.860

100+ parts

$0.257

1k+ parts

$0.189

10k+ parts

$0.168

11,436

$0.860

$0.257

$0.189

$0.168

DigiKey

USA . 18 parts In-Stock

1+ parts

$0.860

100+ parts

$0.347

1k+ parts

$0.239

10k+ parts

$0.181

18

$0.860

$0.347

$0.239

$0.181

Verical

USA . 126,000 parts In-Stock

1+ parts

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$0.182

126,000

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$0.182

Distributors (In-Stock)

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Forefront Electronics and Design

USA . 3 parts In-Stock

1+ parts

$4.410

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3

$4.410

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NAC Semi

USA . 24,000 parts In-Stock

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$0.226

24,000

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$0.226

Chip Stock

USA . 10,500 parts In-Stock

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10,500

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Bristol Electronics

USA . 2,900 parts In-Stock

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2,900

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 5,493 parts In-Stock

1+ parts

$0.290

100+ parts

$0.230

1k+ parts

$0.210

10k+ parts

$0.160

5,493

$0.290

$0.230

$0.210

$0.160

Corohmni

South Africa . 249 parts In-Stock

1+ parts

$1.240

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249

$1.240

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 38,409 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,551 parts In-Stock

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16,551

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Robosynatics

Brazil . 9,748 parts In-Stock

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$0.373

1k+ parts

$0.366

10k+ parts

$0.366

9,748

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$0.373

$0.366

$0.366

Lucentia Tech

USA . 9,748 parts In-Stock

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100+ parts

$0.373

1k+ parts

$0.366

10k+ parts

$0.366

9,748

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$0.373

$0.366

$0.366

Continental Prestige Electronics

USA . 4,322 parts In-Stock

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4,322

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Lixinc

USA . 3,200 parts In-Stock

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3,200

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Eastek

USA . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,710 parts In-Stock

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2,710

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Aranea Global

USA . 100 parts In-Stock

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Overview

Enhance your electronic designs with the ZXTP05120HFFTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their products. The ZXTP05120HFFTA falls under the category of Small Signal Bipolar Junction Transistors (BJT), making it ideal for various applications. With its high DC current gain and low collector-emitter voltage, this PNP Darlington transistor offers unparalleled performance and efficiency. Trust Diodes Incorporated to deliver exceptional value and benefits with the ZXTP05120HFFTA for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and heat resistance, making the transistor reliable for long-term use.

Polarity or Channel Type: PNP

The PNP configuration allows for high current gain and low saturation voltage, ideal for amplification and switching applications.

Configuration: DARLINGTON

The Darlington configuration provides high current gain and allows for high input impedance, making it suitable for driving high loads.

Surface Mount: YES

Surface mount capability offers easy installation and compact design for space-constrained applications.

Maximum Power Dissipation (Abs): 2 W

With a high power dissipation rating, this transistor can handle moderate power levels without risk of overheating.

Maximum Collector-Emitter Voltage: 120 V

The high collector-emitter voltage rating allows for operation in circuits with higher voltage levels, increasing its versatility.

Nominal Transition Frequency (fT): 150 MHz

The high transition frequency enables the transistor to operate at high frequencies, making it suitable for RF and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTP05120HFFTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

985 ns

Maximum Turn On Time (ton):

768 ns

Trade Compliance

ZXTP05120HFFTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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