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ZXTP56020FDBQ-7

Diodes Incorporated

ZXTP56020FDBQ-7 by Diodes Incorporated

ZXTP56020FDBQ-7 by Diodes Inc. is a PNP BJT with VCEsat of 0.39V, hFE of 100, and IC of 2A. Ideal for automotive applications due to AEC-Q101 standard compliance and max operating temp of 150°C. Its small outline package makes it suitable for space-constrained designs.

Median Price

$0.193

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10 parts In-Stock

1+ parts

$0.920

100+ parts

$0.362

1k+ parts

$0.251

10k+ parts

$0.203

10

$0.920

$0.362

$0.251

$0.203

Arrow

USA . 27,000 parts In-Stock

1+ parts

-

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$0.168

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$0.168

Verical

USA . 3,000 parts In-Stock

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$0.193

3,000

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$0.193

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.248

100+ parts

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50

$0.248

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Vyrian

USA . 50,948 parts In-Stock

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50,948

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Chip Stock

USA . 21,500 parts In-Stock

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21,500

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IBS Electronics

USA . 18,000 parts In-Stock

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$0.195

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$0.195

NAC Semi

USA . 15,000 parts In-Stock

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$0.255

15,000

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$0.255

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 50,723 parts In-Stock

1+ parts

$0.143

100+ parts

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50,723

$0.143

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Continental Prestige Electronics

USA . 6,019 parts In-Stock

1+ parts

$0.248

100+ parts

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$0.243

6,019

$0.248

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$0.243

Argo Parts USA

USA . 4,292 parts In-Stock

1+ parts

$0.248

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$0.240

4,292

$0.248

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$0.240

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.248

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500

$0.248

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Aztec Data Supply Inc.

USA . 115 parts In-Stock

1+ parts

$0.550

100+ parts

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115

$0.550

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Corohmni

South Africa . 11 parts In-Stock

1+ parts

$1.085

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11

$1.085

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Lixinc

USA . 3,089 parts In-Stock

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3,089

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Eastek

USA . 3,000 parts In-Stock

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$0.220

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3,000

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$0.220

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Overview

Discover the ZXTP56020FDBQ-7 by Diodes Incorporated, a top-tier manufacturer known for delivering high-quality Small Signal Bipolar Junction Transistors (BJT). This PNP transistor boasts a compact square package shape with separate elements, making it ideal for various applications. With a low maximum VCEsat of 0.39V and excellent thermal performance, this transistor offers unmatched value and reliability. Whether you're looking to optimize power dissipation or maximize collector current, the ZXTP56020FDBQ-7 is the perfect choice for your next project. Elevate your designs with Diodes Incorporated's cutting-edge technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability, making it a suitable choice for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs for efficient performance.

Configuration: SEPARATE, 2 ELEMENTS

With two separate elements, this transistor offers flexibility in circuit design and functionality.

Surface Mount: YES

The surface mount capability simplifies the manufacturing process and saves space on the circuit board.

Maximum VCEsat: 0.39 V

The low VCEsat value indicates minimal power loss, improving overall efficiency.

Package Shape: SQUARE

The square shape allows for easy placement and soldering onto the circuit board.

Terminal Form: NO LEAD

The lead-free terminal form is environmentally friendly and compliant with regulations.

No. of Elements: 2

The two elements provide additional options for circuit configuration and increased versatility.

No. of Terminals: 6

With six terminals, this transistor offers more connection possibilities for complex circuits.

Maximum Power Dissipation (Abs): 2.47 W

The high power dissipation capacity ensures reliable performance under heavy loads.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and enhances the overall design aesthetics.

Minimum DC Current Gain (hFE): 100

The high minimum DC current gain provides consistent and stable amplification in various applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for use in demanding environments without compromising performance.

Maximum Collector-Emitter Voltage: 20 V

The high collector-emitter voltage rating ensures safe operation in high-voltage circuits.

Transistor Element Material: SILICON

Silicon material offers excellent thermal conductivity and high reliability for long-term performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature enables reliable operation in cold conditions without degradation.

Maximum Collector Current (IC): 2 A

The high collector current rating allows for handling high current loads without overheating.

Terminal Finish: MATTE TIN

The matte tin finish provides a durable and corrosion-resistant terminal surface for reliable connections.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layout and connection options.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies the circuit design and ensures proper connection.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering during the manufacturing process.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard for automotive-grade electronic components, ensuring high quality and reliability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTP56020FDBQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Maximum VCEsat:

.39 V

Trade Compliance

ZXTP56020FDBQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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