Loading...

ZXT12N50DXTA

Diodes Incorporated

ZXT12N50DXTA by Diodes Incorporated

ZXT12N50DXTA by Diodes Inc. is a NPN BJT transistor with 2 elements, suitable for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 3A, and min DC current gain of 50. The package is small outline with Gull Wing terminals, operating up to 150°C.

Median Price

$2.040

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,006 parts In-Stock

1+ parts

$1.370

100+ parts

$0.764

1k+ parts

$0.620

10k+ parts

$0.592

1,006

$1.370

$0.764

$0.620

$0.592

Mouser Electronics

USA . 942 parts In-Stock

1+ parts

$1.980

100+ parts

$0.911

1k+ parts

$0.664

10k+ parts

$0.562

942

$1.980

$0.911

$0.664

$0.562

DigiKey

USA . 345 parts In-Stock

1+ parts

$2.100

100+ parts

$0.910

1k+ parts

$0.665

10k+ parts

$0.563

345

$2.100

$0.910

$0.665

$0.563

Element14

Singapore . 1,006 parts In-Stock

1+ parts

$2.200

100+ parts

$1.390

1k+ parts

$1.130

10k+ parts

-

1,006

$2.200

$1.390

$1.130

-

Newark

USA . 408 parts In-Stock

1+ parts

$2.270

100+ parts

$1.310

1k+ parts

$1.080

10k+ parts

-

408

$2.270

$1.310

$1.080

-

Verical

USA . 172,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.563

10k+ parts

-

172,000

-

-

$0.563

-

Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 830 parts In-Stock

1+ parts

$0.720

100+ parts

-

1k+ parts

-

10k+ parts

-

830

$0.720

-

-

-

DF Sales Co.

USA . 830 parts In-Stock

1+ parts

$0.720

100+ parts

-

1k+ parts

-

10k+ parts

-

830

$0.720

-

-

-

LIBRA Elektronik GmbH

Germany . 15,864 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,864

-

-

-

-

NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 198 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

198

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 9,366 parts In-Stock

1+ parts

$4.388

100+ parts

-

1k+ parts

-

10k+ parts

-

9,366

$4.388

-

-

-

Kepictronics

USA . 39,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

39,800

-

-

-

-

Perfect Parts

USA . 31,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

31,512

-

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Eastek

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.870

10k+ parts

-

2,000

-

-

$0.870

-

Continental Prestige Electronics

USA . 697 parts In-Stock

1+ parts

-

100+ parts

$0.951

1k+ parts

$0.722

10k+ parts

-

697

-

$0.951

$0.722

-

Overview

Looking for a reliable and efficient Small Signal Bipolar Junction Transistor for your switching applications? Look no further than the ZXT12N50DXTA by Diodes Incorporated. With a reputation for high-quality products, Diodes Incorporated delivers on performance and reliability. This NPN transistor is perfect for various switching tasks, offering a maximum collector-emitter voltage of 50V and a nominal transition frequency of 132 MHz. Trust in Diodes Incorporated to provide you with the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile in various applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for independent control and operation, enhancing the efficiency of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in these scenarios.

Surface Mount: YES

Surface mount capability makes installation easier and more convenient for modern circuit board applications.

Package Shape: SQUARE

Square shape allows for efficient use of space on the circuit board, especially in compact electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and are well-suited for surface mount applications.

Maximum Power Dissipation (Abs): 1.25 W

With a high power dissipation capacity, this transistor can handle high power loads without overheating.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures reliable and consistent amplification in various circuit designs.

Maximum Operating Temperature: 150 °C

Can safely operate at high temperatures, making it suitable for demanding environments and applications.

Maximum Collector-Emitter Voltage: 50 V

Can handle high collector-emitter voltages, making it versatile for different voltage requirements in circuits.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its high performance and reliability in electronic components.

Maximum Collector Current (IC): 3 A

Capable of handling high collector currents, making it suitable for applications requiring high power output.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability for reliable connections on the terminal.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit board layout and design, accommodating different configurations.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper soldering and mounting processes during assembly.

Nominal Transition Frequency (fT): 132 MHz

High transition frequency enables fast switching speeds and efficient performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXT12N50DXTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

MO-187AA

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXT12N50DXTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20