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ZXT12P40DXTA

Diodes Incorporated

ZXT12P40DXTA by Diodes Incorporated

ZXT12P40DXTA by Diodes Inc. is a PNP BJT with 2 elements, ideal for switching applications. Features include 10W power dissipation, 40V max collector-emitter voltage, and 130MHz transition frequency. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$1.685

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,543 parts In-Stock

1+ parts

$1.530

100+ parts

$0.907

1k+ parts

$0.677

10k+ parts

$0.643

4,543

$1.530

$0.907

$0.677

$0.643

Element14

Singapore . 975 parts In-Stock

1+ parts

$1.613

100+ parts

$0.987

1k+ parts

$0.869

10k+ parts

$0.832

975

$1.613

$0.987

$0.869

$0.832

Farnell

UK . 975 parts In-Stock

1+ parts

$1.757

100+ parts

$0.947

1k+ parts

$0.839

10k+ parts

$0.818

975

$1.757

$0.947

$0.839

$0.818

Newark

USA . 811 parts In-Stock

1+ parts

$1.850

100+ parts

$1.020

1k+ parts

$0.775

10k+ parts

-

811

$1.850

$1.020

$0.775

-

DigiKey

USA . 2,755 parts In-Stock

1+ parts

$2.320

100+ parts

$1.013

1k+ parts

$0.745

10k+ parts

$0.644

2,755

$2.320

$1.013

$0.745

$0.644

Verical

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.644

10k+ parts

-

16,000

-

-

$0.644

-

Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Euro-Tech

UK . 820 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

820

-

-

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 732 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

732

-

-

-

-

Elcom Components

USA . 21 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 975 parts In-Stock

1+ parts

$1.590

100+ parts

$1.010

1k+ parts

$0.814

10k+ parts

-

975

$1.590

$1.010

$0.814

-

Microchip USA

USA . 6,142 parts In-Stock

1+ parts

$4.854

100+ parts

-

1k+ parts

-

10k+ parts

-

6,142

$4.854

-

-

-

Perfect Parts

USA . 59,024 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

59,024

-

-

-

-

Kepictronics

USA . 31,772 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

31,772

-

-

-

-

Lixinc

USA . 4,023 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,023

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.998

10k+ parts

-

1,000

-

-

$0.998

-

Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Overview

Discover the power of the ZXT12P40DXTA by Diodes Incorporated, a high-quality small signal bipolar junction transistor perfect for switching applications. With a maximum collector-emitter voltage of 40V and a peak reflow temperature of 260°C, this PNP transistor offers reliability and efficiency like no other. Whether you're designing circuit boards or working on electronic projects, trust Diodes Incorporated to deliver superior performance and durability in every component. Upgrade your devices with the ZXT12P40DXTA and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, providing flexibility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent use of each element, providing versatility in circuit design.

Transistor Application: SWITCHING

Designed for switching applications where fast response is needed, making it reliable for such tasks.

Surface Mount: YES

Facilitates easy and compact PCB assembly, ideal for space-constrained designs.

Package Shape: SQUARE

Helps in efficient placement on the PCB and provides uniformity in designs.

Maximum Power Dissipation (Abs): 10 W

Can handle high power dissipation, making it suitable for applications that require power handling capabilities.

Minimum DC Current Gain (hFE): 10

Provides sufficient current gain for reliable amplification and switching performance.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 40 V

Withstands higher voltage levels, expanding the range of applications where it can be used.

Transistor Element Material: SILICON

Provides reliability and efficiency in operation, commonly used in transistors for its performance characteristics.

Maximum Collector Current (IC): 2 A

Can handle higher currents, making it suitable for applications that require high current capability.

Terminal Finish: MATTE TIN

Ensures good contact and solderability during assembly, leading to reliable connections.

Nominal Transition Frequency (fT): 130 MHz

Indicates high frequency response, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXT12P40DXTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

MO-187AA

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXT12P40DXTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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