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ZXT13N50DE6TA

Diodes Incorporated

ZXT13N50DE6TA by Diodes Incorporated

ZXT13N50DE6TA by Diodes Inc. is a NPN BJT transistor with 50V VCE, 4A IC, and 115MHz fT. Ideal for switching applications due to its high power dissipation of 1.7W and small outline package style. Features Gull Wing terminals and operates up to 150°C, making it suitable for various electronic designs.

Median Price

$0.665

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 83,214 parts In-Stock

1+ parts

$1.090

100+ parts

$0.445

1k+ parts

$0.312

10k+ parts

$0.225

83,214

$1.090

$0.445

$0.312

$0.225

Mouser Electronics

USA . 7,924 parts In-Stock

1+ parts

$1.090

100+ parts

$0.389

1k+ parts

$0.283

10k+ parts

$0.225

7,924

$1.090

$0.389

$0.283

$0.225

Verical

USA . 63,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.240

63,000

-

-

-

$0.240

Avnet

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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12,000

-

-

-

-

Arrow

USA . 1,020 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.231

10k+ parts

-

1,020

-

-

$0.231

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.385

6,000

-

-

-

$0.385

NexGen Digital

USA . 5,960 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,960

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-

-

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J2 Sourcing AB

Sweden . 3,179 parts In-Stock

1+ parts

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3,179

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Q Components

USA . 2,400 parts In-Stock

1+ parts

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2,400

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Velocity Electronics

USA . 1,761 parts In-Stock

1+ parts

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100+ parts

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1,761

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-

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North Shore Components

USA . 1,761 parts In-Stock

1+ parts

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100+ parts

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1,761

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PC Components Company LLC

USA . 597 parts In-Stock

1+ parts

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597

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Bristol Electronics

USA . 597 parts In-Stock

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597

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Distributors (Availability)

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Perfect Parts

USA . 50,085 parts In-Stock

1+ parts

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50,085

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Kepictronics

USA . 33,000 parts In-Stock

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33,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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10,000

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GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

$0.292

3,000

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-

$0.292

Overview

Enhance your electronic projects with the ZXT13N50DE6TA by Diodes Incorporated. Known for their superior quality and reliable products, Diodes Incorporated offers a wide range of applications in the Small Signal Bipolar Junction Transistors category. This NPN transistor is perfect for switching applications, featuring a maximum collector-emitter voltage of 50V and a maximum collector current of 4A. With a minimum DC current gain of 10, this transistor provides excellent performance and efficiency. Upgrade your designs with the value and benefits that Diodes Incorporated brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and thermal resistance, making the transistor suitable for a wide range of operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and reliable performance.

Configuration: SINGLE

The single configuration simplifies circuit design and improves overall reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and high efficiency.

Surface Mount: YES

Surface mount technology allows for easy and cost-effective assembly, making this transistor ideal for modern manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape provides optimal space utilization and compatibility with a variety of PCB layouts.

Terminal Form: GULL WING

The gull wing terminal form simplifies soldering and ensures secure connections, enhancing overall reliability.

No. of Terminals: 6

With 6 terminals, this transistor offers versatile connectivity options for various circuit configurations.

Maximum Power Dissipation (Abs): 1.7 W

The high power dissipation capability allows the transistor to handle demanding operating conditions without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and enables compact designs in space-constrained applications.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 ensures stable and reliable amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor is suitable for demanding industrial and automotive applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows this transistor to handle high voltage requirements in switching applications.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and performance, making them suitable for a wide range of applications.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle high-current switching applications with ease.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring long-term reliability in various environments.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and allows for easy integration into different layouts.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes without damage.

Nominal Transition Frequency (fT): 115 MHz

The high nominal transition frequency ensures fast switching speeds and low signal distortion in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXT13N50DE6TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXT13N50DE6TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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