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ZXT12N20DXTA

Diodes Incorporated

ZXT12N20DXTA by Diodes Incorporated

ZXT12N20DXTA by Diodes Inc. is a NPN BJT transistor with 2 elements, ideal for switching applications. It has a max collector-emitter voltage of 20V, max collector current of 3.5A, and min DC current gain of 40 (hFE). With a package style of small outline and peak reflow temp of 260°C, it's suitable for surface mount designs.

Median Price

$1.900

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 945 parts In-Stock

1+ parts

$1.758

100+ parts

$1.032

1k+ parts

$0.847

10k+ parts

-

945

$1.758

$1.032

$0.847

-

Mouser Electronics

USA . 146 parts In-Stock

1+ parts

$1.900

100+ parts

$1.020

1k+ parts

$0.735

10k+ parts

$0.643

146

$1.900

$1.020

$0.735

$0.643

DigiKey

USA . 1,489 parts In-Stock

1+ parts

$2.320

100+ parts

$1.013

1k+ parts

$0.745

10k+ parts

$0.644

1,489

$2.320

$1.013

$0.745

$0.644

Newark

USA . 235 parts In-Stock

1+ parts

$2.520

100+ parts

$1.480

1k+ parts

$1.240

10k+ parts

-

235

$2.520

$1.480

$1.240

-

Element14

Singapore . 945 parts In-Stock

1+ parts

-

100+ parts

$1.076

1k+ parts

$0.958

10k+ parts

-

945

-

$1.076

$0.958

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Cyclops Electronics Ltd

UK . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,353 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,353

-

-

-

-

NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.110

10k+ parts

-

1,000

-

-

$1.110

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 5,375 parts In-Stock

1+ parts

$4.854

100+ parts

-

1k+ parts

-

10k+ parts

-

5,375

$4.854

-

-

-

Kepictronics

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33,000

-

-

-

-

Lixinc

USA . 7,996 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,996

-

-

-

-

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,500

-

-

-

-

Perfect Parts

USA . 1,732 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,732

-

-

-

-

Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.994

10k+ parts

-

1,000

-

-

$0.994

-

Overview

Discover the unparalleled performance and reliability of the ZXT12N20DXTA from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and innovation in their Small Signal Bipolar Junction Transistors (BJT). Ideal for switching applications, this NPN transistor offers exceptional value with its high power dissipation, low DC current gain, and impressive collector-emitter voltage. Whether you're designing consumer electronics or industrial equipment, this transistor's compact size, efficient operation, and wide operating temperature range make it the perfect choice for your next project. Experience the difference with Diodes Incorporated's ZXT12N20DXTA - the ultimate solution for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Offers versatility in circuit design and compatibility with a wide range of components.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control of each element, enhancing the transistor's functionality in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and reliable operation.

Surface Mount: YES

Facilitates easy installation on circuit boards, saving space and simplifying the manufacturing process.

Package Shape: SQUARE

Enables a compact design and efficient use of space in electronic devices.

Maximum Power Dissipation (Abs): 1.25 W

Can handle high power dissipation levels, allowing for reliable operation under challenging conditions.

Minimum DC Current Gain (hFE): 40

Provides consistent and stable amplification of input signals, ensuring accurate signal processing.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for use in a variety of environments.

Maximum Collector-Emitter Voltage: 20 V

Offers a high voltage rating, allowing for safe and efficient operation in high voltage circuits.

Transistor Element Material: SILICON

Delivers reliable performance and durability, ensuring long-term functionality of the transistor.

Maximum Collector Current (IC): 3.5 A

Capable of handling high current levels, making it suitable for applications that require significant power output.

Terminal Finish: MATTE TIN

Provides a reliable and consistent electrical connection, ensuring optimal performance of the transistor.

Nominal Transition Frequency (fT): 112 MHz

Offers high frequency capabilities, allowing for fast signal switching and processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXT12N20DXTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

MO-187AA

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXT12N20DXTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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